2008
DOI: 10.1016/j.jnoncrysol.2007.09.030
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Hydrogenated amorphous and nanocrystalline silicon solar cells deposited by HWCVD and RF-PECVD on plastic substrates at 150°C

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Cited by 28 publications
(12 citation statements)
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References 5 publications
(5 reference statements)
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“…Although red phosphorus has a fairly high vapor pressure under vacuum [31], direct reactions between phosphorus vapor and H atoms in the gas phase must be minor. Finally, the highest PH 3 density observed in the present system, 1.3×10 13 cm -3 , is more than or comparable to those in many catalytic (hot-wire) [1][2][3][4][5][6][7][8][9] and plasma-enhanced [9][10][11][12][13][14][15][16][17][18][19] chemical vapor deposition processes. In other words, the amount of PH 3 produced by this technique may be enough for use in industrial applications.…”
Section: Discussionsupporting
confidence: 55%
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“…Although red phosphorus has a fairly high vapor pressure under vacuum [31], direct reactions between phosphorus vapor and H atoms in the gas phase must be minor. Finally, the highest PH 3 density observed in the present system, 1.3×10 13 cm -3 , is more than or comparable to those in many catalytic (hot-wire) [1][2][3][4][5][6][7][8][9] and plasma-enhanced [9][10][11][12][13][14][15][16][17][18][19] chemical vapor deposition processes. In other words, the amount of PH 3 produced by this technique may be enough for use in industrial applications.…”
Section: Discussionsupporting
confidence: 55%
“…PH 3 is one of the most important dopant gases in semiconductor industries and has been used in many chemical vapor deposition processes [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. The problem is that PH 3 is not only highly toxic but also explosive.…”
Section: Introductionmentioning
confidence: 99%
“…Boron-doped highly conducting 0.08 (Ωcm) −1 polycrystalline silicon films were optimized using HWCVD for solar cell application [2][3][4]. Thin-film solar cell fabricated on plastic substrate at 150 • C also showed the prospect of these films as a cost-effective solution [5]. In this article, we described the growth, optimization, and characterization of boron-doped polycrystalline silicon films synthesized using HWCVD.…”
Section: Introductionmentioning
confidence: 99%
“…13,14 • Triode: Deposition conditions similar to low pressure VHF a-Si:H but with an additional biased mesh between the electrodes lead to very low deposition rate but dense material. 15,16 a-Si:H deposition techniques other than PECVD, such as sputtering, 17 hot-wire deposition, 18,19 or expanded thermal plasma deposition 20 did not lead to high solar cell efficiencies or were not commercially practical, and will not be discussed here further.…”
Section: Introductionmentioning
confidence: 99%