“…can therefore easily be chemically eroded by exposure to hydrogen, especially at elevated temperatures, despite the large activation barrier for spontaneous H 2 dissociation [30]. Similar effects have been reported for semiconductor surfaces (Si, Ge, GaAs), which can undergo successive hydrogenation and form volatile hydrides, i.e., SiH 4 (silane), GeH 4 (germane), GaH 3 (gallane) and AsH 3 (arsine), as soon as reactive H atoms are available at the surface [31,32].…”