2017
DOI: 10.1088/1361-6439/aa74fb
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Hydrogen thermal reductive Cu nanowires in low temperature Cu–Cu bonding

Abstract: Nanostructures have attracted great interest in interconnect applications. Herein, we present a novel low temperature, templateless method for directly preparing Cu nanowires through a hydrogen thermal decompositionreduction route of Cu(OH) 2 → CuO → Cu. The thermal treatments are performed at relatively low temperatures of 180 °C-200 °C to meet the low thermal budget in the semiconductor industry. Cu(OH) 2 nanowires are completely transformed into Cu nanowires and the morphologies of the nanowires are success… Show more

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Cited by 7 publications
(4 citation statements)
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“…Conventionally, high-quality CNTs are grown on Cu substrates at elevated temperatures (700–900 °C) in Ar/H 2 atmospheres using extrinsic Ni catalysts due to the poor catalytic activity of copper for CNT growth . However, thermally reduced Cu NWs (Figure a­(ii)) can easily collapse under these conditions, , and extrinsic catalysts act as impurities in the structure. To obtain our hierarchical structure, instead, we used a low-temperature self-catalytic CVD growth process by using acetylene gas (C 2 H 2 ) as a carbon precursor due to its low decomposition temperature (∼600 °C) .…”
Section: Resultsmentioning
confidence: 99%
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“…Conventionally, high-quality CNTs are grown on Cu substrates at elevated temperatures (700–900 °C) in Ar/H 2 atmospheres using extrinsic Ni catalysts due to the poor catalytic activity of copper for CNT growth . However, thermally reduced Cu NWs (Figure a­(ii)) can easily collapse under these conditions, , and extrinsic catalysts act as impurities in the structure. To obtain our hierarchical structure, instead, we used a low-temperature self-catalytic CVD growth process by using acetylene gas (C 2 H 2 ) as a carbon precursor due to its low decomposition temperature (∼600 °C) .…”
Section: Resultsmentioning
confidence: 99%
“…To obtain our hierarchical structure, instead, we used a low-temperature self-catalytic CVD growth process by using acetylene gas (C 2 H 2 ) as a carbon precursor due to its low decomposition temperature (∼600 °C) . We also minimized the CNT growth time to prevent any significant morphological change of the Cu NW structure in the inert atmosphere. , Elemental analysis results of the final Cu-CNT NWs structure in Figure S1 consistently show the vast predominance of carbon and copper in the structure, indicating that the CNT-coated NWs remain in the Cu metallic state after exposure to ambient air. The very low oxygen content (ca.…”
Section: Resultsmentioning
confidence: 99%
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