Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams

Abstract

Hydrogen-terminated vacancies in Siϩ -implanted Si were studied by means of positron annihilation. After the Si ϩ -ion implantation, hydrogen atoms were introduced into the damaged region using a hydrogen plasma ͓hydrogen-atom treatment ͑HAT͔͒. Monoenergetic positron beams were used to measure Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons. It was found that the line shape parameter, S, corresponding to the annihilation of positrons trapped by vacancy-type defects, decreased after HAT. This was attributed to the trapping of positrons by H-decorated vacancy-type defects. Isochronal annealing experiments revealed a strong correlation between positron annihilation parameters and Raman intensities of Si-H, suggesting that hydrogen atoms are released from vacancy-type defects after annealing at 600°C.

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

“…This S parameter is an index of the number and size of vacancy-type defects [7]. The details of the PAS measurement system are described elsewhere [10], [11]. Effective minority carrier lifetime was measured using a 9.35-GHz microwave transmittance measurement system and analyzed on the basis of carrier diffusion and annihilation theory [12], [13].…”

Vacancy-type defects in strained-Si layers deposited on SiGe∕Si structures probed by using monoenergetic positron beams

“…Almost all the positrons annihilate from the trapped state by V 2 in the Si-implanted Si. 23 For the as-received sample, although the lifetime of positrons in the strained-Si layer was close to that of positrons trapped by V 2 , the value of (S,W) was different from the characteristic value of (S,W) for V 2 . For annealing below 950°C, the (S,W) value seemed to move toward the value for defect-free Si with increasing temperature, but for annealing above 1000°C, it started to approach the (S,W) value for defect-free Ge.…”

Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam

“…For the as-implanted sampIe, for example, four blocks were used, where the first to third blocks corresponded to the damaged regions, and the fourth block corresponded to the defect-free region. For ion-implanted Si or damaged Si, it is often observed that the damaged region shifts toward the surface with increasing annealing temperature [15]. However, as shown in Fig.…”