Hydrogen Storage in Metal–Organic Frameworks

Hu, Yun Hang; Zhang, Lei

doi:10.1002/adma.200902096

Cited by 369 publications

(182 citation statements)

References 121 publications

(238 reference statements)

Supporting

Mentioning

178

Contrasting

Unclassified

Order By: Relevance

“…MOF are nanoporous, crystalline materials that consist of metal ions that are connected by organic linkers. [70][71][72][73][74][75] By varying the metal ion or linker, various sizes and shapes of channels or cavities can be obtained. 76 The interest in these materials first appeared after the theoretical paper by K. Zagorodniy and co-authors, who calculated the dielectric constant of a series of MOF based on Zn 4 O(CO 2 ) 4 units connected by different organic linkers and found that all the investigated MOF have k-values below 2.0 with good mechanical properties.…”

Section: Low-k Dielectrics For Future Technology Nodesmentioning

confidence: 99%

Mechanical Stability of Porous Low-k Dielectrics

Vanstreels

Baklanov

2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

This paper reviews the mechanical and fracture properties of porous ultralow-k dielectrics with the focus on chip package interaction related issues. It is shown that the mechanical and fracture properties of porous ultralow-k dielectric films are closely linked with porosity, pore morphology, network structure and deposition technology, while their fracture properties are also sensitive to reactive species in the environment. The survivability of low-k dielectrics upon integration, package assembly and subsequent reliability tests is therefore a combination of their mechanical stability, fracture properties, the specific mechanical or thermo-mechanical load and environmental effects. For the past three decades, the semiconductor industry has been improving the performance of microelectronic devices and the functionality of advanced integrated circuits through the continuous scaling of integrated circuits and the maximization of transistor density.1 Consequently, this encourages the introduction of new materials, processes, chip designs, and packaging strategies into micro-/nano-electronic products. Among these material innovations are insulating materials with a dielectric constant (k) less than that of SiO 2 , so called low-k dielectrics. During the last 15 years, various materials and methods have been developed for fabricating low-k dielectric films, among which the plasma enhanced chemical vapor deposition (PECVD) technology of porous organosilicate glasses (OSG) is the most popular due to its better compatibility with the technological needs.2-5 The reduction in k for low-k dielectrics is being pursued through the introduction of controlled levels of porosity. However, finding a good low-k material has proven to be much more challenging than first expected due to a number of integration and reliability issues.1 Besides the need of being compatible with the different lithography, etching, stripping and cleaning processes that are used in state-of-the-art integration schemes, they must also have sufficient mechanical strength to withstand the high shear stresses as well as harsh chemical environments that are involved during the chemical mechanical polishing process without cohesive or adhesive failure occurring.6-8 On top of that, since low-k dielectrics exhibit intrinsic tensile stresses and have increased coefficients of thermal expansion compared to SiO 2 , thin film cracking and adhesion are serious thermal-mechanical reliability issues for low-k dielectric materials (Figure 1). 9,10 Thermo-mechanical deformation of the package during package assembly and subsequent reliability tests can induce large local stresses that can initiate and propagate cohesive and/or adhesive cracks in different back-end of line (BEOL) layers.11 Therefore, a careful characterization of the mechanical integrity of potential new low-k candidates is required to integrate these new materials and Cu interconnects and to assure reliability during chip packaging and under field conditions. In the microelectronics industry, the elas...

show abstract

Section: Low-k Dielectrics For Future Technology Nodesmentioning

confidence: 99%

Mechanical Stability of Porous Low-k Dielectrics

Vanstreels

Baklanov

2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The main obstacle to use hydrogen economy in daily life is to store hydrogen as an energy carrier, safely and economically [2][3]. In order to store hydrogen, compressed and liquid gas systems [4] have been being used but for safely and more profitable storage there are many choices such as, metal hydrides [5], carbon nanotubes [6][7], metal organic frameworks (MOFs) [8] which are needed to be improved. Some target values are set for storing acceptable amount of hydrogen to use in portable systems by US DOE (4.5 wt.…”

mentioning

confidence: 99%

Porous metal-organic Cu(II) complex of L-Arginine; synthesis, characterization, hydrogen storage properties and molecular simulation calculations

et al. 2014

View full text Add to dashboard Cite

M ost known alternative to fossil fuel energy system is widely researched hydrogen economy in the other name hydrogen energy system [1]. The main obstacle to use hydrogen economy in daily life is to store hydrogen as an energy carrier, safely and economically [2][3]. In order to store hydrogen, compressed and liquid gas systems [4] have been being used but for safely and more profitable storage there are many choices such as, metal hydrides [5], carbon nanotubes [6][7], metal organic frameworks (MOFs) [8] which are needed to be improved. Some target values are set for storing acceptable amount of hydrogen to use in portable systems by US DOE (4.5 wt. % by 2007, 6 wt. % by 2010 and 9 wt. % by 2015) [9] and these target are being cited widely by international community. In order to reach the targets, researchers have been working on alternative storage medias and systems which are safe and widely useful for mobile applications like automobile and portable power systems. Weak forces act a great role 226-4533 ( 1261 ) Fax: +90 (364) in physical sorption (also called as physisorption) in solid hydrogen storage medias and reaches great numbers within low temperatures down to 77K. With common usage areas such like gas sorption [8], gas separation [10], catalyst [11][12]; MOFs have a great sorption ability for hydrogen. For instance, Yaghi and co-workers reported that IRMOF-1, IRMOF-8, IRMOF-11, IRMOF-18 and MOF-177 uptakes hydrogen wt.% 1.32, 1.5, 1.62, 0.89 and 1.25 respectively at 77K and 1 bar [13]. With reticular structure, Cu(II)-arginine complex could be called as a MOF structured complex. Too many MOF structured complex are synthesized by using metal or metal clusters with benzene di-, tri-(or more) carboxylic acids widely but amino acids are not used as building block. Amino acids are used for biological or pharmaceutical applications in general such as vascular effects of dietary of arginine or effects for immunity [14][15]. In addition to other applications, in this work a novel Cu(II)-arginine coordination A B S T R A C T C u(II)-arginine coordination compound was synthesized and characterized by using DSC, DTA, EA, FT-IR, XRD, SEM and EDX analysis techniques and then the hydrogen storage properties were investigated. Hydrogen storage performance of synthesized compound was determined both experimental and theoretically by using Materials Studio which is one of the Molecular simulation software and adsorption measurement equipment. It is found out that the arginine compound uptakes approximately 1.2 wt. % experimentally and 0.8 wt. % theoretically hydrogen in 77K and 100 bars pressure. Also the surface characteristics was calculated and also the possible cites which could uptake hydrogen in a single lattice cell were determined. At the end of this research, in addition to drug and other applications of L-arginine, it is proved that could be used as a part of adsorbent for hydrogen storage application. 02 compound is synthesized and characterized to use for hydrogen storage which is not used before, then...

show abstract

“…17 In particular, MOF-5 has been extensively investigated for H 2 storage applications in fuel cells. 18 One strategy is to increase the complexity of the crystals by producing crystals with a hierarchical structure and a high crystal ordering.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Formation Mechanism of Textured MOF-5

Greer

Liu

Greenaway

et al. 2016

Crystal Growth & Design

View full text Add to dashboard Cite

Textured and house-of-card structures develop on the surfaces of cubic MOF-5 crystals. The formation mechanism of these novel constructions are investigated based on characterisation of the intermediate specimens with different reaction time intervals using scanning and transmission electron microscopies. It is found that the growth of MOF-5 cubic crystals does not follow the classical route. MOF-5 nanocrystallites initially aggregate to form large polycrystalline cubes, followed by surface rearrangement of the nanocrystallites into a textured structure consisting of nanowires lying along the [100], [010], [110] and [110] zone axes, if the face of the cube is defined to be (001). Further crystal growth leads to a house-of-cards structure constructed by interpenetrated nanoplates with their shortest axis parallel to [110] and [110] axes. Evidence of a reversed crystal growth process is also observed. MOF-5 cubes with a single crystal-like appearance are achieved with extended reaction times despite their hidden three tier structure containing varying porosities hidden underneath.

show abstract

Hydrogen Storage in Metal–Organic Frameworks

Cited by 369 publications

References 121 publications

Mechanical Stability of Porous Low-k Dielectrics

Mechanical Stability of Porous Low-k Dielectrics

Porous metal-organic Cu(II) complex of L-Arginine; synthesis, characterization, hydrogen storage properties and molecular simulation calculations

Synthesis and Formation Mechanism of Textured MOF-5

Contact Info

Product

Resources

About