Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes

Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

“…Once again, the high surface area of nanowires provides an ideal approach for enzymatic detection of biochemically important substances [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”

“…GaN's use as a chemical sensor is well-documented [26][27][28][29][30][31][32][33][34]. GaN has a high breakdown field, can operate at high temperatures in excess of 400ºC and has decent thermal conductivity in bulk, low-defect wafers, making it an effective material choice for gas sensing.…”

“…There is also interest in applying these to biomarker detection [21][22][23][24][25][26][27][28][29][30].…”

Recent advances in wide bandgap semiconductor-based gas sensors

“…Thus, one might expect the polarity of the surface to play an important role in hydrogen sensing characteristics. Recent results showed that Schottky diodes fabricated on N-face GaN provided much higher sensitivity than Ga-face GaN and Ga-face AlGaN/GaN HEMTs (Wang et al, 2009a;Wang et al, 2009b). In N-polar GaN Schottky diodes, because of the higher surface reactivity with hydrogen inducing higher polarity, the Schottky barrier heights are reduced much more than those of Ga-polar Schottky diodes.…”

Pt-decorated GaN nanowires with significant improvement in H 2 gas-sensing performance at room temperature

“…Previous investigations related to H 2 sensing, proposed that GaN nanostructures are potential and very promising candidates [8,[51][52]. However, the sensing performance was found to be restricted by several drawbacks, such as low sensitivity, high working temperature (which may result from the low surface area and poor surface microstructure), complicated manufacturing process, etc.…”