Hydrogen sensing by sol–gel grown NiO and NiO:Li thin films

Sta, I.; Jlassi, M.; Kandyla, M.; Hajji, M.; Korallı, Panagiota; Allagui, R.; Kompitsäs, M.; Ezzaouia, Hatem

doi:10.1016/j.jallcom.2014.11.151

Cited by 55 publications

(24 citation statements)

References 47 publications

(50 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The XRD pattern exhibits numerous peaks at 2θ of 37.3 and 43.3, which are referred to (111) and (200) planes of the cubic structure of NiO, respectively, according to the JCPDS file (card no.96-900-8694). This result is in agreement with that of Sta [19]. many peaks referring to lutetium oxide at 2θ of 29.8, 34.5, and 49.6 are observed and refer to the (222), (400), and (440) planes of the cubic structure of Lu 2 O 3 , respectively, from the International Center for Diffraction (card no.…”

Section: Methodssupporting

confidence: 91%

Energy Band Diagram of NiO: Lu2 O3/n-Si heterojunction

Mohammed

Ibrahim

Ramizy

2018

ijs

View full text Add to dashboard Cite

Crystalline NiO and doped with rare earth lutetium oxide (Lu 2 O 3 ) at (6%wt)., have been prepared by pulsed laser deposition (PLD), The Q-switched Nd:YAG laser beam was incident at an angle of 45° on the target surface, and the energy of the laser was 500 mJ, wavelengths of 532nm, and frequency 6Hz. XRD pattern shows all doped and undoped films are polycrystalline, and cubic structure. The 200nm thin NiO showed an average optical energy band gap of 3.4eV, and increase with doping at 6% Lu 2 O 3 . The Hall Effect measurements confirmed that holes were predominant charges in the conduction process (i.e p-type). D.C conductivity measurements with temp-erature (T), show that the films prepared have the two activation energy increase with doping of Lu 2 O 3 . Capacitance-voltage (C-V) measurements were performed for films prepared, where the built in voltage has been determined and decreases in value when doping with the rare earth. In this study we assumed an energy band diagram for p-NiO /n-Si heterojunction.

show abstract

Section: Methodssupporting

confidence: 91%

Energy Band Diagram of NiO: Lu2 O3/n-Si heterojunction

Mohammed

Ibrahim

Ramizy

2018

ijs

View full text Add to dashboard Cite

show abstract

“…The deposited films exhibit XRD peaks at 2θ=37.113°, 43.219°, 62.784°, 75.469°and 79.124°corresponding to lattice planes (111), (200), (220), (311) and (222) respectively which agrees with the ICDD card no:04-033-5840. The peak width is observed to be broadened as the lithium concentration increases, which indicates that the crystalline size decreases as the lithium concentration increases [44]. The lattice constant values of the nickel oxide films deposited with different lithium concentrations are found to be nearly the same and match well with the standard value 0.418 nm (ICDD card no:04-033-5840, table 1).…”

Section: Methodsmentioning

confidence: 57%

“…and the values are presented in table 1. It is observed that the crystalline size of the nickel oxide thin films decreases as the lithium concentration increases [44]. The obtained crystalline size for the undoped NiO is 106.25 nm, LiNiO-1 is 99.51 nm, LiNiO-2 is 75.59 nm, LiNiO-3 is 49.97 nm, LiNiO-4 is 48.06 nm, LiNiO-5 is 46.14 nm.…”

Section: Methodsmentioning

confidence: 86%

Effect of Li doping on conductivity and band gap of nickel oxide thin film deposited by spin coating technique

Arunodaya

Sahoo

2019

Mater. Res. Express

View full text Add to dashboard Cite

Nickel oxide, a stable inorganic p-type semiconductor with wide bandgap is an attractive hole transport material for the perovskite-based solar cells. Doping the nickel oxide with group-1 elements such as lithium, sodium, and potassium is found to increase the conductivity of the film. In the present work lithium doped and undoped nickel oxide thin films are coated on the glass substrate by spin coating method under ambient conditions, and the effects of doping are investigated. The structural, electrical and optical properties have been studied for different doping concentrations. X-ray diffraction confirms the formation of single-phase cubic nickel oxide. It is found that the conductivity increases nine times as the lithium concentration increases. The UV-vis spectroscopy measurement modulates the bandgap with the increase in the lithium-ion concentration.

show abstract

“…It is well known that the electrical properties can be adjusted by doping appropriate dopants into the NiO crystal lattice. Most of the researches focused on single‐element doping for NiO films, such as K, Cu, Na, and Li, but there are limited studies on the effect of several elements co‐doping on the electrical properties of NiO thin films. The single‐element doping usually optimized only the electrical properties of NiO but deteriorated its optical properties.…”

Section: Introductionmentioning

confidence: 99%

Effects of Cu–K Co‐Doping on the Morphological, Optical, and Electrical Properties of NiO Films Deposited by Spin‐Coating Sol–Gel Method

Song

Liu

Wang

et al. 2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

Cu–K co‐doped NiO films (Ni1–2xCuxKxO and x = 0–0.05) are deposited on common glass substrates by the spin‐coating sol–gel method. The phase and the morphological, optical, and electrical properties of NiO films as a function of the Cu–K co‐doping concentration are explored by X‐ray diffraction, scanning electron microscopy, and ultraviolet–visible spectrophotometer and Hall effect measurement systems, respectively. All the films are pure phases of the cubic rock‐salt structure. As the doping concentration increases, the preferred orientation of the Ni1–2xCuxKxO films changes from (200) to (111). Moreover, the surface morphologies of the films are obviously affected by the Cu–K co‐doping concentration. The absorption coefficients of the Cu–K co‐doped NiO films are relatively higher than that of the undoped film on the whole in the visible region except x = 0.02. With the increase in doping concentration, the resistivity of the films decreases on the whole. Finally, the figures of merit (FOM) of the films are considered, and the maximum FOM of the films is achieved at x = 0.02.

show abstract

Hydrogen sensing by sol–gel grown NiO and NiO:Li thin films

Cited by 55 publications

References 47 publications

Energy Band Diagram of NiO: Lu2 O3/n-Si heterojunction

Energy Band Diagram of NiO: Lu2 O3/n-Si heterojunction

Effect of Li doping on conductivity and band gap of nickel oxide thin film deposited by spin coating technique

Effects of Cu–K Co‐Doping on the Morphological, Optical, and Electrical Properties of NiO Films Deposited by Spin‐Coating Sol–Gel Method

Contact Info

Product

Resources

About