Hydrogen-related photoluminescence in CdTe

Hamann, J.; Blass, D.; Burchard, Almut; Casimir, C.; Deicher, M.; Filz, T.; Magerle, R.; Ostheimer, V.; Schmitz, C.; Wolf, H.; Wichert, Th.

doi:10.1016/s0022-0248(98)80240-6

Cited by 3 publications

(5 citation statements)

References 14 publications

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“…Indeed, recent 200 eV H ϩ implantations at temperatures above 50°C produced these lines more strongly. 14 From the small half width ͑0.08-0.15 meV͒ and the spectral positions of the seven lines it is concluded that they originate from the recombination of bound excitons. The relative intensities of the more thoroughly studied H 1 , H 2 , and H 3 lines vary for CdTe crystals from different batches.…”

Section: Hydrogen-related Photoluminescence In Cdtementioning

confidence: 95%

Hydrogen-related photoluminescence in CdTe

Hamann

Blass

Casimir

et al. 1998

Applied Physics Letters

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Section: Hydrogen-related Photoluminescence In Cdtementioning

confidence: 95%

Hydrogen-related photoluminescence in CdTe

Hamann

Blass

Casimir

et al. 1998

Applied Physics Letters

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“…Some studies have also been performed to understand shallow donor neutralization in n-type indium doped CdTe [5]. Photoluminescence characterization of p-type undoped CdTe shows hydrogen introduction within CdTe film suggesting hydrogen actively plays a role in passivation of defects in CdTe as in case of other semi-conductor materials [6]. Since CdTe is now a prominent photovoltaic technology and forms a considerable portion of commercial photovoltaic installations, it is important to understand the effect of hydrogen plasma passivation on CdTe photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

Characterization of CdTe Photovoltaic Devices Passivated Using Hydrogen Plasma

Munshi

Kaminski

Abbas

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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Thin-film polycrystalline CdTe photovoltaic devices were studied using electrical and material characterization methods to understand the effects of hydrogen plasma passivation treatment. Devices were fabricated using sublimation and were exposed to hydrogen plasma for 10, 20 and 30 minutes. Current density vs voltage measurements were performed to measure the performance of the devices. Capacitance vs voltage graphs showed that dopants are active and the device behaved like a CdCl 2 passivated device. Microscopic characterization was performed using SEM and (S)TEM that showed larger grains and more homogenous film coverage as compared to films without passivation suggesting grain growth during H 2 passivation.

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“…It has recently been shown that after the exposure of undoped CdTe to a hydrogen plasma at 160 C, seven new photoluminescence (PL) lines H 1 to H 7 are observed in the energy range between 1.575 and 1.591 eV. Since these lines are also visible after a 200 eV implantation of H + ions into CdTe, it was concluded that they are caused by the presence of hydrogen in CdTe [1,2]. High magnetic fields are a proper tool to investigate the electronic and microscopic structure of the associated defects.…”

mentioning

confidence: 99%

“…Experimental Procedure. Nominally undoped, Bridgman-grown CdTe crystals were exposed to a hydrogen plasma at 160 C and 70 Pa for 1 h [1,2]. The magneto-optical investigations were carried out at 1.7 K. The luminescence, excited by an Ar laser, was dispersed by a grating monochromator with a focal length of 1 m and detected by a cooled photomultiplier tube.…”

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Magneto-Optical Properties of a Hydrogen-Related Defect in CdTe

Hamann

Worschech

Blass

et al. 1998

phys. stat. sol. (b)

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Nominally undoped CdTe was exposed to a hydrogen plasma at 160 C. It has been shown that after this treatment, seven typical photoluminescence lines H 1 to H 7 are observed in the excitonic region. The dependence of the most intense of these hydrogen-related lines, H 3 , on external magnetic fields up to |B| = 7 T is investigated. The diamagnetic shift of the H 3 line is proportional to |B| 2 , showing that it is caused by the recombination of excitons. Since an electron±hole interaction is observed, the exciton is either bound to an isoelectronic defect or to an ionised donor. The anisotropy of the Zeeman splitting is explained in terms of a small uniaxial compressive strain in a [100] direction perpendicular to the [001] surface orientation. In contrast, the well-known copperbound exciton line, used as a reference, reveals uniaxial tensile strain in the same [100] direction. Therefore, the defects associated with the H 3 line either have a [100] symmetry or are incorporated close to [100] oriented extended defects. The electron g-factor is g e = ± ±1.50 AE 0.04, and the hole parameters are K = 0.40 AE 0.05 and L = 0.00 AE 0.04, describing the isotropic and the anisotropic Zeeman effect, respectively.Introduction. It has recently been shown that after the exposure of undoped CdTe to a hydrogen plasma at 160 C, seven new photoluminescence (PL) lines H 1 to H 7 are observed in the energy range between 1.575 and 1.591 eV. Since these lines are also visible after a 200 eV implantation of H + ions into CdTe, it was concluded that they are caused by the presence of hydrogen in CdTe [1,2]. High magnetic fields are a proper tool to investigate the electronic and microscopic structure of the associated defects. Only the H 1 , H 2 , and H 3 lines, however, are well isolated from each other and from other lines, which is favourable for magneto-optical investigations. In this paper, the results obtained from the H 3 line are presented, because this is the most intense line and thus yields the most reliable data. From the Zeeman splittings of the H 1 and H 2 lines, though not identical, similar conclusions can be drawn as for the H 3 line.Experimental Procedure. Nominally undoped, Bridgman-grown CdTe crystals were exposed to a hydrogen plasma at 160 C and 70 Pa for 1 h [1, 2]. The magneto-optical investigations were carried out at 1.7 K. The luminescence, excited by an Ar laser, was dispersed by a grating monochromator with a focal length of 1 m and detected by a 1 Corresponding

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Hydrogen-related photoluminescence in CdTe

Cited by 3 publications

References 14 publications

Hydrogen-related photoluminescence in CdTe

Hydrogen-related photoluminescence in CdTe

Characterization of CdTe Photovoltaic Devices Passivated Using Hydrogen Plasma

Magneto-Optical Properties of a Hydrogen-Related Defect in CdTe

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