Characterization of CdTe Photovoltaic Devices Passivated Using Hydrogen Plasma

Abstract

Thin-film polycrystalline CdTe photovoltaic devices were studied using electrical and material characterization methods to understand the effects of hydrogen plasma passivation treatment. Devices were fabricated using sublimation and were exposed to hydrogen plasma for 10, 20 and 30 minutes. Current density vs voltage measurements were performed to measure the performance of the devices. Capacitance vs voltage graphs showed that dopants are active and the device behaved like a CdCl 2 passivated device. Microscopic characterization was performed using SEM and (S)TEM that showed larger grains and more homogenous film coverage as compared to films without passivation suggesting grain growth during H 2 passivation.