2012
DOI: 10.1002/anie.201203585
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Hydrogen Production Using a Molybdenum Sulfide Catalyst on a Titanium‐Protected n+p‐Silicon Photocathode

Abstract: A low-cost substitute: A titanium protection layer on silicon made it possible to use silicon under highly oxidizing conditions without oxidation of the silicon. Molybdenum sulfide was electrodeposited on the Ti-protected n(+)p-silicon electrode. This electrode was applied as a photocathode for water splitting and showed a greatly enhanced efficiency.

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Cited by 293 publications
(236 citation statements)
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“…• Cteated sample does not show consistent trend due to the incomplete conversion of structural conversion from precursors as well as the presence of pronounced to WS x O y and WO 3 .…”
Section: Resultsmentioning
confidence: 93%
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“…• Cteated sample does not show consistent trend due to the incomplete conversion of structural conversion from precursors as well as the presence of pronounced to WS x O y and WO 3 .…”
Section: Resultsmentioning
confidence: 93%
“…These oxides are formed due to the presence of unavoidable trace amount of oxygen in the system, which may react with (NH 4 ) 2 WS 4 precursor and yield WO 3 .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…19,23-25 (3) lowering the reaction overpotential and improving the heterogeneous reaction kinetics by attaching catalysts to the surface of the anode and/or cathode; [26][27][28] (4) application of a surface dipole layer on the semiconductor to shi the relative positions of the valence and conduction bands relative to the HER and OER reactions in the electrolyte;…”
Section: 8mentioning
confidence: 99%
“…Work by Seger et al 28 and others [53][54][55] has shown that higher charge-collection efficiency in photovoltaics can be achieved with single crystal semiconductors compared to polycrystalline material due to reduced recombination as a result of fewer grain boundaries and surface defects. This nding extends to PEC water-splitting, which also involves the separation of photogenerated charges in semiconductors under illumination.…”
Section: Passivation Layer Suppression Of Surface Recombination and Imentioning
confidence: 99%