Hydrogen localization near boron in silicon

Abstract

Several models of boron neutralized by atomic hydrogen in silicon were tested by secondary ion mass spectrometry and infrared spectrometry. The hydrogen concentration is comparable to that of boron. Boron neutralization appears as a drop in free-carrier absorption and as an increase in resistivity. A new infrared vibrational mode attributed to 〈111〉 vibrations of H tied to Si appears at 1875 cm−1.

Local Vibrational Modes of Carbon-Hydrogen Complexes in Proton Irradiated AlGaN

“…However, the electron irradiated sample shows a noticeable decrease in the CH 3 stretching mode. This clearly demonstrates that electron irradiation break up the CH 3 complex in good agreement with others [24,25]. There is an increase of the CH 2 and CH concentrations in the electron irradiated sample as seen from the increase in the area under the LVMs stretching modes.…”

Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performance

“…2(c), the solid-phase doping efficiency b i.e., hole/boron concentration ratio, increases monotonically with doping level and reaches the highest of 0.5-1.0 at C B > 10 20 atoms/cm 3 . We attribute the low b at lower C B to the hydrogen passivation of acceptorboron atoms, which was identified in the IR absorption spectrum that shows a sharp peak at 1900 cm À1 assigned to the Si-H-B complex [9,10]. The Si-H-B complex can be eliminated by the thermal annealing at 200°C, and further free carriers are generated by this process with an almost perfect acceptor-activation (b % 1) over the whole doping range (C B $ 10 18 -5 · 10 21 atoms/cm 3 ).…”

Effect of thermal annealing and hydrogen-plasma treatment in boron-doped microcrystalline silicon

“…Fig. 4 shows the schematic picture, proposed by Pankove [10,11] and Bergman [12] showing the B-related local-bonding configuration involving H atom in p-μc-Si:H network structure. As shown in Fig.…”