2009
DOI: 10.1016/j.tsf.2009.03.050
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Hydrogen ion sensors based on indium tin oxide thin film using radio frequency sputtering system

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Cited by 48 publications
(28 citation statements)
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“…The figure includes data from the present contribution as well as literature results for ZnO [11] and [22], ITO/Si [23], ITO Fig. 6b corresponding to two piled subgroups according to the area range: a below 10 mm 2 and b from 10 to 100 mm 2 /SnO 2 /Si [23], SnO 2 /ITO [21] and [24], polypyrrole / SnO 2 / ITO [24], Si 3 N 4 [25], ITO [21], and SnO 2 :F [14] and [21]. The solid line represents the theoretical Nernst sensitivity for potentiometric sensors, which is equal to 59.2 mV/pH [26].…”
Section: Resultsmentioning
confidence: 99%
“…The figure includes data from the present contribution as well as literature results for ZnO [11] and [22], ITO/Si [23], ITO Fig. 6b corresponding to two piled subgroups according to the area range: a below 10 mm 2 and b from 10 to 100 mm 2 /SnO 2 /Si [23], SnO 2 /ITO [21] and [24], polypyrrole / SnO 2 / ITO [24], Si 3 N 4 [25], ITO [21], and SnO 2 :F [14] and [21]. The solid line represents the theoretical Nernst sensitivity for potentiometric sensors, which is equal to 59.2 mV/pH [26].…”
Section: Resultsmentioning
confidence: 99%
“…The ambient temperature was ∆I pH7 pH12 pH = 12 → 11 → 10 → 9 → 8 → 7 pH = 12 → 11 → 10 → 9 → 8 → 7 pH = 12 → 11 → 10 → 9 → 8 → 7 pH = 12 → 11 → 10 → 9 → 8 → 7 pH = 12 → 11 → 10 → 9 → 8 → 7 controlled at 25 ± 0 1 C using a PID temperature controller. Because the channel current can be modified using a concentration of hydrogen ions, when the drain-source voltage V DS is maintained at a constant value of 0.2 V, both typical sets of I DS -V GS curves of the AZO nanorods pH-EGFET based on the Si substrates for 1, 3,6,9,12 times pretreatment are obtained, as shown in Figure 5. The I DS -V GS curves are shifted in parallel with varying electrolyte solution pH values, and become more positive with increasing pH.…”
Section: Resultsmentioning
confidence: 99%
“…We have also deposited ITO films on Si and SiO 2 /Si substrates as the sensing membranes of EGFET by RF sputtering. 9 10 applied a TiO 2 thin film on a ITO glass substrate as the sensing membrane of an EGFET pH sensor. It is found that the bilayer structure of TiO 2 /ITO EGFET exhibits good linear sensitivity from pH 1 to 11.…”
Section: Introductionmentioning
confidence: 99%
“…Unlike the integration of an ion selective electrode and a field-effect transistor (FET) in an ISFET, the EGFET is a structure to isolate the FET from the chemical environment, in which a sensing head is extended from the gate electrode through a signal wire. Up to the present, Manuscript most sensing membranes applied in EGFETs are metal oxides, such as zinc oxide (ZnO) [11], tin oxide (SnO 2 ) [12], indium tin oxide (ITO) [13], ruthenium oxide RuO 2 ) [14], and a mixed thin film of vanadium and tungsten oxide (V 2 O 5 /WO 3 ) [15], and these metal oxides exhibit well pH sensing characteristics in EGFETs. However, the brittleness of metal oxide might restrict their applications in the flexible and disposal sensors in future.…”
Section: Introductionmentioning
confidence: 99%