Hydrogen impurities in quantum well wires

Abstract

The binding energy of hydrogenic impurites in a quantum well wire has been calculated as a function of the width of the quantum well wire and the location of the impurity with respect to the axis of the wire. The calculations have been preformed using a variational wave function which takes into account the confinement of the carriers in the wire. For the confining potential used in our calculations, we have used the models of either an infinite potential well or a finite potential well whose depth is detemined by the discontinuity of the band gas in the quantum well wire and the cladding. For the infinite potential well model, the binding energy continues to increase as the radius of the wire decreases while in the finite potential well model, the binding energy reaches a peak value as the wire radius decreases and then decreases to a value characteristic of the cladding. The binding energy also depends upon the location of the impurity in the wire and is a maximum when the impurity is located on the axis of the wire.

Binding Energy of a Bound Polaron in a Quantum Well Wire

“…On the other hand, the binding energy depends on the impurity position; as the impurity moves from the center to the edge of the wire, the impurity binding energy diminishes. This result is consistent with that obtained by Brown and Spector [19] in the case when the phonon effect is ignored. The inclusion of the optical phonon leads to an enhancement of the binding energy.…”

“…Since the pioneer work realized by Bastard [1] of the hydrogenic impurity binding energy in quantum well, extensive investigation has been reported as a function of different parameters such as the spatial confinement, the impurity position and the applied external field (electric and magnetic field) [16][17][18][19][20][21][22].…”

Effect of electron–phonon interaction on the impurity binding energy in a quantum wire

“…The impurity binding energies of a quantum wire with infinite or finite potential barrier [9] and with different shapes of the cross-section [10,11] have been discussed. The effect of location [10,11] of impurities with respect to the wire axis was also studied previously.…”

“…• A. Theoretically, the electronic properties of a hydrogenic impurity in the quantum well [5,6,7,8] and the quantum wire [9,10,11,12,13,14] have been studied by many authors. The impurity binding energies of a quantum wire with infinite or finite potential barrier [9] and with different shapes of the cross-section [10,11] have been discussed.…”

Binding energy of hydrogenic impurity states in an inverse parabolic quantum well under static external fields

“…The hydrogenic impurities play a crucial role in the design of nano-structured semiconductor materials, due to the fact that they affect strongly their optical and electronic properties, such that to suit the engineer's needs [3,9,18,[20][21][22][23][24][25][26][27][28]. In addition, their influence can be controlled by the presence of external fields.…”