Abstract:Electron cyclotron resonance plasma enhanced chemical vapor deposition of hydrogen-free SiCN films has been studied. Infrared and Raman spectroscopies were used for chemical characterization of deposited films, showing Si-N, Si-C, Si-Si, and C-N bonds in composition. Optical responses of the films between 1.5 and 4.5 eV were obtained by spectroscopic ellipsometry. Cathodoluminescence of the films shows mainly a broad band of emission at around 2.3 eV together with overlapped contributions at higher energies de… Show more
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