Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering

Vibrational frequencies of hydrogenated silicon carbonitride: A DFT study

“…Amorphous hydrogenated silicon carbonitride films have been subject of significant research effort over the past decade . Indeed, SiC x N y :H appears as a promising candidate for a wide range of applications including mechanical layer [6,8,10,20,21,23,24], optical layer [1,3,6,9,[18][19][20][21][22]25], low-k dielectric layer [4,5], protective layer [17,20], surface passivation layer for silicon solar cells [2,7,25] and gas separation membranes [13,[26][27][28].…”

“…Amorphous silicon carbonitride films have been obtained through various deposition techniques including both physical vapor deposition (PVD) and chemical vapor deposition (CVD). In particular, different magnetron PVD technologies (DC [17,24] RF [17,18] or high power pulse magnetron sputtering [17]), as well as vapor transport-CVD [16] or different plasma enhanced CVD (PECVD) technologies (low frequency [13,23,[25][26][27], radio frequency [2,[4][5][6][7][8][9]12,14,15], microwave, [1,19,22,28] remote PECVD [3,10,11] or atmospheric pressure PECVD [20,21]), were carefully examined in the literature. Adjusting the deposition conditions (type and concentration of precursor, additional reactants, substrate temperature, type of carrier gas…) allows tuning both the composition and the bonding configuration that greatly affect material properties (electronic properties [22], gas transport [26], …).…”

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

“…Our results and their trends are in good agreement with the E g values of SiC x N y films obtained by reactive sputtering of a SiC target [ 65 ]. It should be noted that the band gap of hydrogenated SiC x N y :H layers deposited using MS and complex gas mixtures of nitrogen and argon with hydrogen [ 29 ], methane [ 20 ], and acetylene [ 19 , 31 ] or obtained at a higher synthesis temperature [ 18 ], has a higher value and reaches 3.8 eV. In fact, hydrogenated SiC x N y :H films obtained by plasma enhanced chemical vapor deposition method can exhibit larger values of E g = 4.7 eV [ 66 ].…”

“…Owing to their multifaceted properties, silicon carbonitrides SiC x N y [ 1 , 2 , 3 ] are modern multifunctional materials with a wide range of applications. SiC x N y exhibits a combination of tribo-mechanical (high hardness [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ], wear resistance [ 6 , 7 ], low coefficient of friction [ 6 ], high adhesion to construction materials [ 6 ]), chemical (high thermal and corrosion resistance [ 1 , 7 , 10 ]), and physical (low dielectric constant [ 1 ], controlled in a wide range of values of refractive index [ 18 ] and optical band gap [ 18 , 19 , 20 , 21 ], high optical transparency in a wide spectral range [ 19 , 21 , 22 , 23 ], high hydrophobicity [ 24 ]) properties. Due to the variable composition of the compound, it is possible to change the values of the conductivity, the hardness, and Young’s modulus.…”

Method to design stoichiometric deposition reactive sputtering without hysteresis

“…Faddeeva and Oseguera Stoichiometric deposition reactive sputtering without hysteresis Surface Engineering 2013 VOL 29 NO 7 Equation (9) is deduced from equations (7), (9), (11) (10) is deduced by substituting equations (9), (10)- (12) and (26) 27, which is the entropy balance for compound mode. In addition, it may be noticed that at the left hysteresis limit at which the exit RG flow is different from zero, the entropy generation is zero, and further decrease in the inlet RG flowrate would cause the negative value of entropy generation, due to which the jump to metallic mode occurs (see Fig.…”