Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO&lt;sub&gt;2&lt;/sub&gt;-Si Systems

Terukov, E. I.; Ber, B.Ja.; Kudojarova, V.Kh.; Davydov, V. Ju; Nazarov, A. N.; Vovk, Ja.; Ashok, S.

doi:10.4028/www.scientific.net/ssp.69-70.595

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Plasma Influence On Defects In the Subsurface Silicon Layer1

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2008

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“…To such phenomena, we can relate: 1) suppressing the swirl defect creation under silicon growth in the hydrogen ambient [102]; 2) hydrogen-enhanced thermal donor creation in the hydrogen atmosphere or under hydrogen plasma treatment [103,104]; 3) enhanced annealing of radiation defects in hydrogenated crystalline silicon [105] and under RF plasma treatment [14]; 4) enhanced dopant activation under RF plasma effect [15] or additional hydrogen implantation with following thermal annealing [106,107]. A specific peculiarity of these phenomena is the lack of the restoration of defect properties after the following thermal annealing.…”

Section: Plasma Influence On Defects In the Subsurface Silicon Layermentioning

confidence: 99%

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2008

Semicond. phys. quantum electron. optoelectron.

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The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro-and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO 2-Si interface and SiO 2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.

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