Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon

Job, R.; Ulyashin, A.; Fahrner, W. R.; Simoen, Eddy; Claeys, Corneel; Tonelli, G.

doi:10.1016/s0168-583x(01)00894-1

Cited by 6 publications

(6 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The hydrogenated and subsequently annealed samples were characterized by spreading resistance probe ͑SRP͒, capacitance-voltage ͑C-V͒, and deep-level transient spectroscopy ͑DLTS͒ measurements. 7,9 For the SRP measurements the samples were mechanically beveled under low angles ͑5°͒ on a rotating quartz plate.…”

Section: Methodsmentioning

confidence: 99%

“…Application of this procedure to p-type Cz silicon results in the creation of a deep p-n junction. 7,9 In oxygenated high-resistivity n-type material, one expects a graded n-type doping profile if OTDs are formed, which may be desirable for certain applications. Therefore, it was decided to test the same procedure, which has proven successful for normally doped Cz material to the oxygen-doped HR FZ silicon studied.…”

Section: Table IImentioning

confidence: 99%

“…One, the plasma treatment of oxygenated HR FZ material yields an enhanced donor formation, similar as in Cz silicon. 7,9 However, the created density is one to two decades smaller, compared with normally doped n-or p-type Cz material. This could be explained by the significantly lower starting ͓O i ͔ in the range of ϳ10 17 cm Ϫ3 , assuming an ͓O i ͔ n dependence for the OTD concentration ͑with n ϳ 3 to 4͒, if they are the responsible centers.…”

Section: Table IImentioning

confidence: 99%

See 2 more Smart Citations

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Simoen

Claeys

Job

et al. 2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

The behavior of oxygen in oxygen-doped high-resistivity (HR) n-type float-zone (FZ) silicon has been studied using a combination of analytical techniques. In the as-doped material, a large number of deep levels have been observed with deep-level transient spectroscopy. The corresponding parameters (concentration, activation energy, and trap signature) are given, and the possible identity is discussed in view of the presence of oxygen and other impurities in the material. In addition, the impact of a low-temperature hydrogen-plasma preannealing on the formation of oxygen thermal donors (OTDs) and other oxygen-related shallow thermal donors (STDs) at 450°C is described. It is shown that the introduction rate of OTDs in oxygenated HR FZ silicon is much smaller than in Czochralski silicon. In fact, for short anneals at 450°C following a plasma treatment, the STDs are the ones which have been predominantly created near the surface of the samples. © 2003 The Electrochemical Society. All rights reserved.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Table IImentioning

confidence: 99%

Section: Table IImentioning

confidence: 99%

See 1 more Smart Citation

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Simoen

Claeys

Job

et al. 2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…1 a) was not observed, if the oxidation prior to the implantations was omitted (16). Such pre-oxidation processes can affect quite deep wafer regions as could be seen, for instance, from analyses previously reported in (17,18) for oxidized highresistive FZ Si substrates devoted to radiation detector applications. Hence, it can be assumed that the generation of the p-type defect species is suppressed by the in-diffused oxygen.…”

Section: Resultsmentioning

confidence: 94%

The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon

Laven¹,

Job²,

Schulze³

et al. 2010

ECS Trans.

View full text Add to dashboard Cite

Doping profiles in proton and helium co-implanted and annealed n-type float zone silicon wafers are analyzed by means of spreading resistance measurements. After annealing at sufficiently high temperatures and/or long-enough duration, the hydrogen-related donor profiles known from proton implantations are significantly enhanced by the helium irradiation. The resulting profile shape exhibits a strong resemblance to the radiation damage distribution of the co-implantation. By increasing the ultimately introduced number of hydrogen related donors without varying the available amount of hydrogen, it is shown that the donor profile resulting from proton implantation and annealing is limited by the defect species and the implanted hydrogen is supplied in surplus. The maximum of the additionally induced donor distribution by the helium implantation shows a different dependency on the fluence compared to the donor maximum induced by mere proton irradiation. The diffusion of the implanted protons through the irradiated layer during annealing is clearly impacted by the helium irradiation.

show abstract

“…Hence, it can be expected that the mobility of oxygen is enhanced at 500 °C, and therefore, oxygen moves towards the buried implantation damage layer where a rather large amount of oxygen accumulates, although the general oxygen concentrations in FZ Si is quite low. It even can be expected that under the applied process conditions, a minor amount of such thermal donors is also created in the buried damage layer, based on the mechanisms described in [19]. Therefore, in hydrogenated silicon the probability is strongly enhanced that interstitial oxygen meets appropriate defect sites in the buried damage layer for the formation of electrically active donor-like defect complexes.…”

Section: A) B ) C )mentioning

confidence: 99%

Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation

et al. 2008

View full text Add to dashboard Cite

By means of two-point-probe Spreading Resistance (SR) analyses, the formation and evolution of hydrogen-related and vacancy-related donor and acceptor states were studied in helium implanted and subsequently hydrogen plasma-treated n-type Float-Zone (FZ) silicon wafers. He + -implantation was carried out at 3.75 MeV and 11 MeV, applying fluences of 1⋅10 14 cm -2 and 2⋅10 13 cm -2 . After 15-min post-implantation H-plasma exposures at substrate temperatures between 350 °C and 500 °C, distinct surplus doping profiles were observed in the subsurface layers of the treated FZ Si samples. Also acceptor-like states occurred, at least partially compensating for the initial n-type doping, so that even buried p-type layers could be created under appropriate process conditions. The nature of the involved defect complexes will be discussed.

show abstract

Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon

Cited by 6 publications

References 18 publications

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon

Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation

Contact Info

Product

Resources

About