Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Simoen, Eddy; Claeys, Corneel; Job, R.; Ulyashin, A.; Fahrner, W. R.; Tonelli, G.; Gryse, O De; Clauws, Paul

doi:10.1149/1.1595665

Cited by 6 publications

(3 citation statements)

References 40 publications

(61 reference statements)

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“…Although deep levels, similar to those observed in the present study, have been reported previously in as-grown high-resistivity FZ-Si [15][16][17][18][19], little is known on the exact origin of these centres. Firstly, it was suggested that a level at E c − 0.49 eV, where E c is the conduction band edge, is related to Si self-interstitials [15,16].…”

Section: Discussionsupporting

confidence: 90%

Reversible room temperature interaction of impurities in Si

Monakhov¹,

Svensson²

2005

J. Phys.: Condens. Matter

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Impurity-related electronic states in high-purity high-resistivity n-type floatzone (FZ) Si have been studied by deep level transient spectroscopy (DLTS). FZ-Si with a doping concentration of ∼1 × 10 12 cm −3 was chemically etched in 10% diluted hydrofluoric acid (HF) prior to thermal deposition of a Schottky gold contact. DLTS measurements of the as-prepared diode reveal the presence of a deep electronic trap at 0.52 eV below the conduction band. Depth profiling measurements show that the trap concentration increases towards the surface, indicating that it is due to an impurity diffusing from the surface. Heat treatments for 15 min at 150-300 • C lead to annealing of the 0.52 eV trap and formation of a 0.17 eV trap that is uniformly distributed versus depth. A reverse formation of the 0.52 eV trap with a uniform depth distribution, accompanied by annealing of the 0.17 eV trap, is observed after storage of the sample at room temperature for 20-50 days. A subsequent heat treatment at 300 • C results in the repeated annealing of the 0.52 eV trap and formation of the 0.17 eV trap, which is followed by the reversed formation of the 0.52 eV trap and annealing of the 0.17 eV trap at room temperature (RT). Several such annealing/formation cycles can be performed with these centres with a good reproducibility of the data. It might be suggested that both centres are related to hydrogen, although the exact origin is not identified.

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Section: Discussionsupporting

confidence: 90%

Reversible room temperature interaction of impurities in Si

Monakhov¹,

Svensson²

2005

J. Phys.: Condens. Matter

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“…A similar trap (at E C -E T = 73 meV) in FZ-silicon was reported also in Ref. (21), but there the trap was not stable above 350 °C, which makes an accordance implausible. Trap B1: Trap B1 was detected for a proton dose of 3×10 13 cm -2 and within an annealing temperature range of 350-400 °C.…”

Section: Deep-level Defects In Proton Irradiated and Annealed Siliconsupporting

confidence: 79%

Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon

et al. 2014

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We review the principal mechanisms of deep-level defect formation after proton irradiation and subsequent annealing of float zone grown crystalline silicon. Various reaction paths commonly related to vacancy-complexes, interstitial oxygen and hydrogen are discussed. In the experimental part DLTS results of proton-irradiated pn-diode structures are presented. It appears that some detected defects show a thermal stability differing from that reported in literature. Furthermore the metastability of two defects at 300 meV and 418 meV below the conduction band is examined. This behavior commonly designated to a negative-U defect is for the first time reported in a sample annealed at 350° C.

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“…SRP, I-V, and DLTS measurements are performed, the details of the plasma exposure and measurements can be found in previous reports [26,29,30]. After being ultrasonically cleaned in acetone and methanol and dipped in a 1% HF solution, the silicon wafers are exposed to hydrogen plasma in a plasma-enhanced chemical vapor deposition (PECVD) system.…”

Section: Methodsmentioning

confidence: 99%

P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

et al. 2005

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A rather large amount of shallow donors is created in p-type Czochralski silicon (Cz Si) wafers after a hydrogen plasma exposure at ∼270 °C (substrate temperature) and a subsequent annealing in the temperature range of 350-450 °C. This two-step process has been used for the fabrication p-n junction diodes at low temperatures. Current-voltage characteristics show that the breakdown voltages of these diodes are higher than 100 V. The diode leakage is found to be improved after slow ramp annealing at temperatures up to 250 °C. Deep level transient spectroscopy measurements reveal that the oxygen related thermal donor is not the dominant doping species as expected before.

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Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Cited by 6 publications

References 40 publications

Reversible room temperature interaction of impurities in Si

Reversible room temperature interaction of impurities in Si

Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon

P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

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