Hydrogen effects in III-nitride MOVPE

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

“…The possible reasons for the advantage of H 2 -free ambient for p-GaN formation for deep-green LEDs are as follows: first of all, as it was shown in [11,16], in hydrogen-free ambient the growth rate anisotropy of Mg-doped GaN is less pronounced and, even more importantly, realization of the p-type conductivity in GaN:Mg is insensitive to the growth direction. These facts come from less equilibrium-like GaN growth conditions in the absence of hydrogen.…”

Stimulated Formation of InGaN Quantum Dots

“…This effect looks to be the main difference between MOVPE of III-nitrides and classical III-V compounds , Yakovlev et al, 2008. The most known manifestation of hydrogen influence on III-N epitaxial process is an insistence of InGaN growth in hydrogen-free ambient (Nakamura et al, 1993) due to suppression of indium incorporation into InGaN layers by hydrogen (Piner et al, 1997).…”

“…The most known manifestation of hydrogen influence on III-N epitaxial process is an insistence of InGaN growth in hydrogen-free ambient (Nakamura et al, 1993) due to suppression of indium incorporation into InGaN layers by hydrogen (Piner et al, 1997). At the same time, hydrogen influences growth and properties of practically all layers in device structures starting from nucleation layer and up to p-contact layer (Lundin et al, 2009a;Lundin et al, 2009b;Yakovlev et al, 2008).…”

“…1). The detailed study of the effect was a base for development of a kinetic model of hydrogen interaction with the surface of III-nitride layers originally suggested in and further developed in (Yakovlev et al, 2008).…”

Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach

“…Hence, the vast majority of particles are either deposited on reactor walls colder than the susceptor surface or flushed out of the chamber rather than to drop onto the wafers. Growth and H 2 -etching of GaN on the wafer surface is accounted for as described in [8]. Rate-limited deposition and condensation of lower volatile species on reactor walls are considered according to [9].…”