Hydrogen centers and the conductivity of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">I</mml:mi><mml:msub><mml:mi mathvariant="normal">n</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>single crystals

Yin, Weikai; Smithe, Kirby K. H.; Weiser, Philip; Stavola, Michael; Fowler, W. Beall; Boatner, L. A.; Pearton, S. J.; Hays, David C.; Koch, Siegfried

doi:10.1103/physrevb.91.075208

Cited by 37 publications

(28 citation statements)

References 31 publications

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“…The concentration of recombination centers decreases significantly in the atmosphere of hydrogen. The hydrogen may passivate the defects by incorporating in the zinc and indium vacancies on the surface 30–32 . In addition, the oxygen molecules adsorbed on the surface of oxides can form a chemical bond with hydrogen and desorb 33,34 .…”

Section: Resultsmentioning

confidence: 99%

Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Ilin

Иким

Форш

et al. 2017

Sci Rep

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The possibility of reducing the operating temperature of H2 gas sensor based on ZnO-In2O3 down to room temperature under green illumination is shown. It is found that sensitivity of ZnO-In2O3 composite to H2 nonmonotonically depends on the oxides’ content. The optimal ratio between the components is chosen. The new mechanism of nanocrystalline ZnO-In2O3 sensor sensitivity to H2 under illumination by green light is proposed. The mechanism considers the illumination turns the composite into nonequilibrium state and the photoconductivity change in the H2 atmosphere is linked with alteration of nonequilibrium charge carriers recombination rate.

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Section: Resultsmentioning

confidence: 99%

Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Ilin

Иким

Форш

et al. 2017

Sci Rep

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“…Hydrogen was proposed to act as a shallow donor in In 2 O 3 − and thus to increase the carrier density compared with undoped films. Furthermore, previous studies have suggested that the source of doping is attributed to interstitial hydrogen (H i + ) or substitutional hydrogen (H O + ) rather than to doubly charged oxygen vacancies (V O +2 ). ,, Wu et al reported that in In 2 O 3 :H films that contained both, amorphous and crystalline parts, a higher amount of hydrogen was incorporated in the amorphous region compared to the crystalline region.…”

Section: Discussionmentioning

confidence: 99%

Influence of ZnO-Based Sub-Layers on the Growth of Hydrogen Doped Indium Oxide

Erfurt

Heinemann

Schmidt

et al. 2018

ACS Appl. Energy Mater.

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Because of its high mobility, hydrogen-doped indium oxide (In 2 O 3 :H) has a high potential as front contact in thin film or Si heterojunction solar cells. Certain growth conditions are required to process high-mobility In 2 O 3 :H. In Cu(In,Ga)Se 2 (CIGS) devices, the growth of In 2 O 3 :H is influenced by the existing sublayers. Therefore, the intention of the present study is to investigate these influences on In 2 O 3 :H, deposited by pulsed direct current magnetron sputtering onto bare glass substrates or Zn(O,S) and ZnO layers, as they are commonly used in CIGS solar cells. The amorphous Zn(O,S) and the crystalline ZnO films were deposited by radio frequency sputtering onto planar glass as well as rough CIGS samples. On the basis of X-ray diffraction and transmission electron microscopy measurements, the structure of the as-grown In 2 O 3 :H films was evaluated. X-ray diffraction patterns show amorphous growth on glass and Zn(O,S) and a higher crystallinity of In 2 O 3 :H films grown on ZnO layers. The preferred orientation of In 2 O 3 :H films changes from ( 222) to ( 400) when grown on ZnO layers with small grains. A pronounced crystalline growth leads to a reduction in charge carrier density and electron mobility. This was found for crystalline grown In 2 O 3 :H on planar glass as well as on rough CIGS samples in combination with a ZnO layer. A post deposition thermal treatment leads to the crystallization of amorphous phases and reduces strain in crystalline grown films, increasing the electron mobility for all films. However, the electrical properties of the crystalline-grown In 2 O 3 :H films did not improve sufficiently.

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“…[33] A high density of hydrogen impurities have also been found in magnetron sputtering grown IGZO with a concentration of 10 20 cm −3 , [34] hydride vapor phase epitaxy (HVPE) grown Ga 2 O 3 , [33f ] and flux grown In 2 O 3 single crystals. [35] The chemistry of hydrogen in oxide semiconductor is quite complex. [33a,36] Hydrogen can be incorporated as interstitials (H i ) and as substitution at the oxygen sites (H O ), [25g,37] and can be neutral H o (inactive), H + (donor) and H − (acceptor).…”

Section: Hydrogen Impuritiesmentioning

confidence: 99%

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

et al. 2021

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over 80% in the visible light range. [2] ITO is widely used as essential transparent conducting electrodes in flat panel displays, touch screens, and solar cells. The global ITO market has an annual growth rate of 15% and is valued at 7 billion USD in 2019. In 2004, Nomura and Hosono et al. made great breakthrough in oxide thin film transistor (TFT) based on amorphous indium gallium zinc oxide (IGZO) grown at room temperature. [3] The amorphous IGZO showed an impressive mobility of 9 cm 2 V −1 s −1 , about 10 times of amorphous hydrogenated Si TFT which was used exclusively for displays at that time. Soon after Hosono's seminal work, IGZO TFT was commercialized by Sharp Corporation in 2012, and then rapidly expanded to mobile phones, tablets and laptops. [4] In 2019, the fifth generation IGZO TFT went to mass production, capable of driving large-area displays (85 in.) with ultrahigh 8 K resolution. [5] Moreover, oxide TFTs are also considered as the most promising transistors for next-generation curved, flexible, or even rollable electronics. [6] The great success of oxide semiconductors is underpinned by their unique electronic structure, amenability for n-type doping, as well as intrinsic stability. Oxide semiconductors have bandgap larger than 3 eV, enabling transparency in the visible spectrum. The conduction band (CB) of oxide semiconductors is typically composed of empty ns-orbitals (n ≥ 4) of heavy posttransition metals. The large, spherical ns-orbitals give rise to a high electron mobility even in amorphous phases, as well as high dopability for hosting a high density of electrons. Therefore, oxide semiconductors are amendable via doping to be a transparent semiconductor or a transparent conductor, depending on the purposes of device applications, e.g., TFT or ITO. However, there are two sides to every coin. The nature of electronic structure of oxide semiconductors also leads to the fundamental limitation of achieving p-type oxide semiconductors, which is exacerbated by the presence of a high background electron density arising from the formation of unintentional defects and impurities. [1a,7] The lack of p-type semiconductor significantly limits the great potential of oxide electronics. [7b] A high electron density and defect states cause detrimental effects on oxide TFT device performance, such as a high off-current, lower mobility, and instability issues. [8] In the past two decades, considerable research efforts have been made to understand the microscopic origin of defect states and background electrons Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new...

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Hydrogen centers and the conductivity ofIn2O3single crystals

Abstract: 2

Cited by 37 publications

References 31 publications

Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Influence of ZnO-Based Sub-Layers on the Growth of Hydrogen Doped Indium Oxide

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

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