Hydrogen-anion formation near a (2×1)-reconstructed Si(100) surface: Substrate-electronic-structure and trajectory dependence

Abstract

We calculated the yield of outgoing hydrogen negative ions after the reflection of 1-keV neutral hydrogen atoms from a (2 × 1)-reconstructed Si(100) surface. We find that the charge-transfer dynamics at the reconstructed surface is dependent on both the surface-electronic structure and orientation of the projectile trajectory relative to the crystal azimuthal directions. Our results are in good quantitative agreement with the measured H − fractions of Maazouz and Esaulov [Surf. Sci. 398, 49 (1998)] for scattering trajectories that are aligned perpendicularly to rows of silicon dimers.

Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen

“…These results do conflict with results expected from room temperature sample preparation using atomic hydrogen, suggesting the possibility that the reactivity of either the surface under the STM tip or the liberated hydrogen atoms may be different than during a room temperature sample preparation. 19 The advantage of low voltage HDL is that it can produce very precise patterns, so the intrinsic formation of spurious DB defects can prove to be particularly insidious for applications where isolated DBs act as sites for surface functionalization. Some metals such as gallium 20 or organic molecules such as styrene 21 have shown an affinity for single DB deposition.…”

Nonadiabatic dynamics in energetic negative fluorine ions scattering from a Si(100) surface

“…The H − formation on a Si surface has been studied experimentally and theoretically. [31][32][33][34][35][36][37][38][39] The s character of the H − ion state is particularly simple because there is only one orientation of the atomic state with respect to the surface. In contrast, only a few studies on other types of negative ions have been performed so far.…”

“…25 As far as we know, there are only a few studies on semiconductor surfaces. [26][27][28][29][30][31][32][33][34][35][36][37][38][39] Most of these studies mainly involved the neutralization and negative-ion formation of positive projectiles scattering on silicon surfaces. The H − formation on a Si surface has been studied experimentally and theoretically.…”

H−formation in collisions of hydrogen atoms with Al(100) surfaces

“…We model the unreconstructed Al(100) surface as a slab with a thickness of 10 bulk lattice constants a 0 = 7.653 [34]. The unit supercell consists of 9 layers of Al ionic cores plus a vacuum region on top of both surfaces of the Al slab.…”