Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors

Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

“…Therefore the total energies have been shifted up by a value equal to the defect's charge times the LDA bandgap error. We have used a 0.5 and 3.0 eV correction for silicon and silicon-dioxide, respectively [14]. Using this correction for hydrogen in bulk silicon results in theoretical donor and acceptor levels which agree nicely with experiment [17].…”

“…In Fig. 1 we report our current estimates for the formation energy [14] of atomic hydrogen in (A) silicon and (B) silicon-dioxide. The results in Fig.…”

“…For full details of the calculations see Ref. [14]. Although calculations including the strain at the interface has not been performed, the bulk calculations reported in Fig.…”

“…Previously, calculations based on density functional theory within the local density approximation (LDA) [15] have been used to examine hydrogen and silicon dangling bonds in bulk Si [7][8][9], in bulk SiO 2 [10][11][12] and at their interface [13,14]. In Fig.…”

“…These experiments place stringent limits on the possible atomic models for hot electron degradation. Theoretically, several groups [7,8,10,11], including our own [9,[12][13][14], have investigated with ab initio density functional calculations the energetics and defect levels of hydrogen in Si, SiO 2 and at their interfaces. In the present paper, we analyse the results of theory and experiment to develop an understanding of the microscopic behavior of hydrogen during hot electron stress in MOSFETs.…”