Superlattices and Microstructures
 2000
DOI: 10.1006/spmi.2000.0859
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Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

Blair Tuttle
1
,
K. Hess
2
,
Leonard F. Register
3
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Cited by 3 publications
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