Hydrogen adsorption on silicon (1 1 1) surfaces studied by Auger electron spectroscopy

Efficient visible luminescence from porous Si (PSI) layers is associated with the quantum size and the presence of hydrogen as a passivaant on the inner surface. The increase of the amount of H was performed by wet chemical etching in HF, producing the increase of photoluminescence intensity. The detection of H is not possible by AES or XPS and is difficult even with EELS. Elastic peak electron spectroscopy (EPES) showed a large decrease of the elastic reflection coefficient Y, appearing in the elastic peak, and measured with a retarding field analyser (RFA). The effective elastic backscattering coefficients of a monolayer of H, Si, 0 were calculated for the RFA angular window and resulted in reasonable agreement with literature data available. They were completed for the 50-100 eV range. Experiments on a Si(ll1) wafer verified calculations. A dramatic decrease of re was found on HF-etched Psi (a factor of 3-10) in the 50-100 eV range. Above 200 eV, effects are shadowed by the contribution of deeper layers of the substrate and reduced attenuation of the H adlayer. This indicates the formation of high H coverage on the porous inner surface. Experiments are interpreted by multiple elastic reflection and attenuation of electrons by the H-covered porous surface. Detailed AES and EELS studies made with a hemispherical analyser resulted in Si and SiO, bond on the surface.

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Electron spectroscopy of porous silicon layers. Indirect detection of hydrogen by elastic peak electron spectroscopy

Gergely

Gruzza

Bideux

et al. 1994

Surface & Interface Analysis

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Investigation of the initial stages of oxidation of microcrystalline silicon by means of X-ray photoelectron spectroscopy

Gimzewski

Vepřek

1983

Solid State Communications

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Alkyl radical involvement in silicon surface chemistry

et al. 1987

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Hydrogen adsorption on silicon (1 1 1) surfaces studied by Auger electron spectroscopy

Cited by 13 publications

References 9 publications

Electron spectroscopy of porous silicon layers. Indirect detection of hydrogen by elastic peak electron spectroscopy

Electron spectroscopy of porous silicon layers. Indirect detection of hydrogen by elastic peak electron spectroscopy

Investigation of the initial stages of oxidation of microcrystalline silicon by means of X-ray photoelectron spectroscopy

Alkyl radical involvement in silicon surface chemistry

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