Alkyl radical involvement in silicon surface chemistry

Bozack, Michael J.; Taylor, Patrick A.; Choyke, W. J.; Yates, John T.

doi:10.1016/0039-6028(87)90124-5

Cited by 21 publications

(3 citation statements)

References 15 publications

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“…31,32 It has been proposed that when biacetyl adsorbs onto Ag͑111͒ the lone pair electrons on the oxygen interact with empty surface states, causing the molecule to twist slightly away from the trans configuration. 1, [5][6][7][8]11,13 In previous experiments involving acetone and acetaldehyde adsorbed on Si͑100͒, we concluded that interaction of the carbonyl with the dimer produced a similar di-bonded species which has the C-O bond oriented parallel to the surface. Though biacetyl binds to Ag͑111͒, the interaction is weak and desorption occurs without decomposition.…”

Section: A Biacetyl Adsorption On Si"100…mentioning

confidence: 99%

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Thermal chemistry of biacetyl on Si(100)

Armstrong¹,

Pylant²,

White³

1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inThermal chemistry of copper(I)-N,N′-di-sec-butylacetamidinate on Cu(110) single-crystal surfaces J. Vac. Sci. Technol. A 30, 01A114 (2012); 10.1116/1.3658381Adsorption and electron-induced polymerization of methyl methacrylate on Ru ( 10 1 ¯ 0 ) Thermal and electron-driven chemistry of CCl 4 on clean and hydrogen precovered Si(100) X-ray photoelectron spectroscopy ͑XPS͒, temperature programmed desorption ͑TPD͒, and high-resolution electron energy loss spectroscopy ͑HREELS͒ were used to study the adsorption and decomposition ͑for temperatures between 160 and 1100 K͒ of biacetyl (CH 3 COCOCH 3 ) on Si͑100͒. We conclude from peak positions in the C(1s) and O(1s) XPS spectra that biacetyl initially adsorbs by binding through the carbonyl -bonds either forming a di-bonded form of biacetyl or completely cleaving the carbonyl double bond. In TPD, biacetyl molecularly desorbs at 185 K for the multilayer and between 263 and 285 K for the monolayer indicated in TPD. TPD also indicates ketene, methane, and hydrogen desorption at 330, 823, and 870 K, respectively. On the surface, there is evidence in XPS that all CvO containing fragments completely dissociate or desorb by 700 K. Above 700 K, hydrogen begins transferring to the surface as shown by the appearance of a peak in HREELS at 2103 cm Ϫ1 ( Si-H ). Surface hydrogen recombines with methyl groups and other surface hydrogen producing methane ͑823 K͒ and molecular hydrogen ͑870 K͒. SiO desorbs at 1010 K and is reflected in XPS by total loss of the O(1s) signal. Finally, heating to 1100 K results in SiC formation.

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Section: A Biacetyl Adsorption On Si"100…mentioning

confidence: 99%

“…[5][6][7][8][9][10][11][12][13][14][15][16] Methane, like most all other small saturated hydrocarbons, does not chemisorb on Si͑100͒. Ethylene reversibly adsorbs on Si͑100͒, whereas propylene and acetylene decompose, forming silicon carbide.…”

Section: Introductionmentioning

confidence: 99%

Thermal chemistry of biacetyl on Si(100)

Armstrong¹,

Pylant²,

White³

1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…All hydrocarbon radical species are assumed to stick with unit efficiency. Although there are no experimental measurements of hydrocarbon radical sticking coefficients or theoretical results available, enhanced reactivity of propene with a hydrogenated-Si(100) surface is thought to be caused by formation of a C3Hv radical on the surface (42). It is thus reasonable to assume that hydrocarbon radicals have a higher probability of reacting with the surface than stable molecules.…”

Section: Chemical Reaction Mechanismmentioning

confidence: 99%

A Model of Silicon Carbide Chemical Vapor Deposition

Allendorf

Kee

1991

J. Electrochem. Soc.

202

144

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We present a model describing the interacting gas phase and surface chemistry present during the steady-state chemical vapor deposition (CVD) of silicon carbide (SIC). In this work, we treat the case of steady-state deposition of SiC from silane (Sill4) and propane (C3H8) mixtures in hydrogen carrier gas at one atmosphere pressure. Epitaxial deposition is assumed to occur on a Pre-existing epitaxial silicon carbide crystal. Pyrolysis of Sill4 and C3H8 is modeled by 83 elementary gas-phase reactions. A set of 36 reactions of gas-phase species with the surface is used to simulate the deposition process. Rates for the gas/surface reactions were obtained from experimental measurements of sticking coefficients in the literature and theoretical estimates. Our results represent the first simulation of a silicon carbide deposition process that includes detailed descriptions of both the gas phase and surface reactions. The chemical reaction mechanism is also combined with a model of a rotating disk reactor (RDR), which is a convenient way to study the interaction of chemical reactions with fluid mechanics. Transport of species from the gas to the surface is accounted for using multicomponent transport properties. Predictions of deposition rates as a function of susceptor temperature, disk rotation rate, and reactant partial pressure are presented. In addition, velocity, temperature, and concentration profiles normal to the heated disk for 41 gas-phase species are determined using reactor conditions typical of epitaxial silicon carbide deposition on silicon substrates.

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