Decomposition of H2O ON Si(111)7 × 7 studied using laser-induced thermal desorption

Koehler, Birgit; Mak, C. H.; George, Steven M.

doi:10.1016/0039-6028(89)90487-1

Cited by 43 publications

(14 citation statements)

References 55 publications

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“…The available evidence suggests that adsorption of D 2 0 on to the silicon clusters involves dissociative chemisorption to yield -D and -OD bound separately to the cluster surface. Similar behavior is observed on bulk silicon surfaces (24)(25)(26)(27).…”

Section: Reactions With Oxygen and Water: Etching Versus Chemisorptionsupporting

confidence: 78%

“…Studying reactions on bulk surfaces is exceedingly difficult and there is often a wide variation in the initial sticking coefficients reported by different groups (17)(18)(19)(20)(24)(25)(26)(27). One problem with studying surface reactions is that the surface can become contaminated.…”

Section: Sticking Probabilities For Oxygen and Water: Comparison Withmentioning

confidence: 99%

“…Recent studies of the reactions of oxygen, water, and ammonia (17,25,(34)(35)(36) with bulk silicon have shown that dangling bond sites play a crucial role in dissociative chemisorption of these reagents. Blocking the dangling bond sites inhibits the reactions.…”

Section: Why Are the Clusters So Unreactive?mentioning

confidence: 99%

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Nanosurface Chemistry on Size-Selected Silicon Clusters

Jarrold

1991

Science

358

166

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Studies of the chemistry that occurs on the nanosurfaces of size-selected silicon clusters reveal a number of fascinating qualitative similarities to the behavior of bulk surfaces. However, silicon clusters containing up to 70 atoms appear to be much less reactive than bulk silicon surfaces. This unexpected result suggests that these large silicon clusters are not just small crystals of bulk silicon, but have much more compact geometric structures.11 2 0 1160 1 2 0 0 1 2 4 0 units wide. Mass (amu)SCIENCE, VOL. 252

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Section: Reactions With Oxygen and Water: Etching Versus Chemisorptionsupporting

confidence: 78%

Section: Sticking Probabilities For Oxygen and Water: Comparison Withmentioning

confidence: 99%

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Nanosurface Chemistry on Size-Selected Silicon Clusters

Jarrold

1991

Science

358

166

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“…LITD techniques have been extremely useful for the measurement of surface diffusion [1-4] and surface reaction [3-61 kinetics on single-crystal metal surfaces. These silicon-containing species facilitated the study of SiOH and SiNH2 decomposition on Si(111)7x7 [9,10]. These studies have measured H2 desorption [7], 02 adsorption [81 and H20 [91 and NH3 [10] decomposition kinetics on Si(111)7x7.…”

Section: Introductionmentioning

confidence: 99%

<title>Laser-induced thermal desorption studies of surface reaction kinetics</title>

et al. 1991

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Laser induced thermal desorption (LITD) has proven to be an effective probe of reaction kinetics on single-crystal surfaces. The ability of LITD techniques to measure adsorption, decomposition and desorption kinetics will be illustrated by studies of SiC14 and (CH3CH2)2 SiH2 on Si(111)7x7. Silicon tetrachloride, SiC1I, is important in silicon epitaxial growth and diethylsilane, (CH3CH2)2 SiH2, is a promising candidate for silicon atomic layer epitaxy. The desorption products, sticking coefficients and decomposition and desorption kinetics measured by these LITD investigations are important for an understanding of silicon epitaxy by chemical vapor deposition.

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“…For the LID studies, the Si( 111) 7x7 were prepared and cleaned as described previously (1,6,7). The Si(I 11) 7x7 surfaces were then exposed to H 2 0 and NH 3 (ND 3 ) at 300 K until a saturation coverage was acheived.…”

Section: Introductionmentioning

confidence: 99%