Hydrodynamic device simulation of 200 GHz SiGe heterojunction bipolar transistors

Abstract

This paper studies the effect of hydrodynamic relaxation times on the base and collector currents, I B , and I C , and ac figures of merit, cut-off frequency f T , and maximum oscillation frequency, f max , for 200 GHz SiGe heterojunction bipolar transistors (HBTs). Heterojuntion bipolar transistor, SiGe semiconductor, hydrodynamic device simulation, impact ionization