Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth

Shibata, T.; Sone, H.; Yahashi, K.; Yamaguchi, M.; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Itoh, Nobuo

doi:10.1016/s0022-0248(98)00170-5

Cited by 44 publications

(22 citation statements)

References 7 publications

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“…According to previous results of the SAG/ELO using SiO 2 mask by HVPE, the selectivity of the GaN growth on window regions was excellent and the thick ELO GaN layers had good crystalline quality [9,13,14]. Figures 1(a)-1(c) show typical SEM images of the SAG-GaN by HVPE using < > 1 1 00 stripe W masks.…”

Section: Resultssupporting

confidence: 59%

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask

Kawaguchi

Nambu

Sone

et al. 1999

MRS Internet j. nitride semicond. res.

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Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO 2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the < > 1 1 00 crystal axis with the W mask as well as the SiO 2 mask. There are no voids between the SiO 2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO 2 mask for the < > 1120 and < > 1 1 00 stripe patterns. No voids are observed between the W or SiO 2 mask and the overgrown GaN layer by using MOVPE.

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Section: Resultssupporting

confidence: 59%

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask

Kawaguchi

Nambu

Sone

et al. 1999

MRS Internet j. nitride semicond. res.

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“…The sample B, which is thicker than sam- ple A, has no cracks on the GaN film, but the coalescence of adjacent GaN crystals was not performed completely. The low lateral growth rate upon the SiO 2 mask region is attributed to the low V/III ratio as reported by Shibata et al [6], who grew SAG-GaN on a GaN templated sapphire substrate. For the present cases, we estimated the lateral growth rates (LGR).…”

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confidence: 54%

“…These reactions have been responsible for the poor reproducibility of the GaN growth. In order to avoid the chemical reaction, we might use a GaN templated Si substrate as in the case of HVPE growth on sapphire substrate [6]. But because of the cracks introduced in the GaN layer due to the large thermal expansion coefficient mismatch, we could not achieve a uniform GaN layer in the following HVPE growth.…”

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confidence: 99%

HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate

Nishimura

Honda

Yamaguchi

et al. 2003

phys. stat. sol. (c)

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The hydride vapour phase epitaxial (HVPE) growth of thick GaN was attempted on a (111) Si substrate. In order to avoid fatal damage to the substrate surface in the HCl ambient and to get a high growth rate, a two-step growth method was adopted; the first low growth rate step with low HCl flow rate followed by a second high growth rate step. As the result, a flat surface of thick GaN was obtained. The full width at half maximum of the photoluminescence spectra at 77 K was as narrow as 17.7 meV.

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“…Another 'epitaxial' approach becoming recently more and more attractive, is the use of hydride vapor phase deposition (HVPE) to grow thick (few hundreds of µm) GaN layers on foreign substrates [9][10][11][12]. Then the substrates can be removed [13][14][15] and large-diameter free-standing GaN wafers can be obtained.…”

mentioning

confidence: 99%