GaN Bulk Substrates Grown under Pressure from Solution in Gallium

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

“…Laser action is clearly proved by spontaneous emission saturation, abrupt line narrowing, and the strong TE polarization of output light. platelet crystals were grown by the High Pressure Solution method from a liquid gallium at nitrogen gas pressure to the order of 1.0 GPa [3]. The crucial advantage of this method is that the resulting GaN crystals are almost free of structural defects.…”

Fabrication and properties of GaN-based lasers

“…We synthesized our crystals using the high nitrogen pressure solution [5] method, which is a temperature gradient growth method based on the direct reaction between gallium and nitrogen at high-temperature and high-nitrogen pressure. The dominating morphological form of GaN crystals grown by the high-pressure method is a thin hexagonal platelet (Fig.…”

“…The GaN crystals obtained by this method have an average density of dislocations in the order of 10 5 -10 6 cm À2 . Though the DEEP method obviously dominates in the mass production of GaN substrates, alternative methods like the amonothermal [4] method or the highpressure synthesis method [5] may offer advantages for nitride lasers industry, especially in terms of higher wafer quality. Indeed, the density of dislocations of the high-pressure grown crystals is lower than 100 cm À2 [5].…”

“…Though the DEEP method obviously dominates in the mass production of GaN substrates, alternative methods like the amonothermal [4] method or the highpressure synthesis method [5] may offer advantages for nitride lasers industry, especially in terms of higher wafer quality. Indeed, the density of dislocations of the high-pressure grown crystals is lower than 100 cm À2 [5]. In this paper we would like to give the reader a short review of the challenges related to the production of laser structures on very low dislocation density, high-pressure grown bulk GaN crystals.…”

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

“…In High Nitrogen Pressure Solution (HNPS) [8] growth of GaN, the crystals grown without intentional doping are strongly n-type (n410 19 cm À 3 ), which is due to a high oxygen content. It was shown [9] that the addition of Mg into the growth solution leads to full compensation of donors in the crystals and in this way highly resistive Mg-doped GaN can be grown by HNPS as individual free standing platelets of about 1 cm in size and with a very low dislocation density of less than 100 cm À 2 .…”