Abstract:Sb2(S1−xSex)3 (0 ≤ x ≤ 1) compounds have been proposed as promising light-absorbing materials for photovoltaic device applications. However, no systematic study on the synthesis and characterization of polycrystalline Sb2(S1−xSex)3 thin films has been reported. Here, using a hydrazine based solution process, single-phase Sb2(S1−xSex)3 films were successfully obtained. Through Raman spectroscopy, we have investigated the dissolution mechanism of Sb in hydrazine: 1) the reaction between Sb and S/Se yields [Sb4S7… Show more
“…For comparison, XRD patterns of Sb 2 S 3 and Sb 2 Se 3 are also included in Figure a, where the Sb 2 S 3 film was synthesized by CBD method and the Sb 2 Se 3 was synthesized by selenization of the CBD‐prepared Sb 2 S 3 film in selenium vapor at 400 °C for 10 min. The detailed peak index is shown in Figure a, confirming the formation of orthorhombic stibnite crystal structures . It is also observed that from Sb 2 S 3 to Sb 2 (S 1−x Se x ) 3 and Sb 2 Se 3 , the characteristic diffraction peaks shift toward low diffraction angle.…”
Section: Methodssupporting
confidence: 54%
“…One of the basic criteria for obtaining high PCE is to acquire high V OC and J SC simultaneously. Considering that Sb 2 S 3 and Sb 2 Se 3 are isomorphous possessing the same space group and nearly identical unit‐cell parameters, the synthesis of alloy type Sb 2 (S 1−x Se x ) 3 with tunable bandgap is feasible . This compositional manipulation offers an opportunity to improve J SC or V OC by simply increasing or decreasing Se ratio in the Sb 2 (S 1−x Se x ) 3 alloy film.…”
Section: Methodsmentioning
confidence: 99%
“…These results suggest successful partial selenization, i.e., the formation of Sb 2 (S 1−x Se x ) 3 . However, XRD characterization alone cannot manifest the detailed sulfur and selenium distributions in the film, the formation of homogenous alloy‐type Sb 2 (S 1−x Se x ) 3 could also lead to this kind of diffraction pattern . In this regard, we conducted depth profile analysis by using X‐ray photoelectron spectroscopy (XPS), where the surface sample was removed by sputtering with Ar + ion.…”
To efficiently convert solar energy into electricity at low cost with long‐term stability is one of the major tasks in solar cell research and applications. Antimony sulfide‐selenide [Sb2(S1−xSex)3] with a tunable bandgap in the range of 1.1–1.8 eV are considered promising photovoltaic materials due to their low‐toxicity, long‐term durability, and abundant element availability. Herein, selenium‐graded Sb2(S1−xSex)3 is synthesized through diffusion controlled solid‐state reaction between selenium and pre‐formed Sb2S3 film. In the device, sulfur‐rich Sb2(S1−xSex)3 with large bandgap leads to high voltage output, while narrow‐bandgap selenium‐rich Sb2(S1−xSex)3 expands spectral response toward longer wavelength. As a consequence, the device yields an open‐circuit voltage comparable to Sb2S3 solar cell, along with a significantly enhanced photocurrent density of 19.43 mA cm−2, finally delivering a certified power conversion efficiency of 5.71%, which is the highest certified value in planar heterojunction solar cells based on Sb2(S1−xSex)3. Initial stability examination shows that the device can maintain 88% efficiency after storing for 90 days in moderate humidity and ambient light irradiation. This investigation offers an effective strategy to the fabrication of composition‐graded Sb2(S1−xSex)3 for long‐term stable devices. The methodology may be extended for the fabrication of a broad class of composition‐graded metal sulfide/selenide for solar cell performance enhancement.
“…For comparison, XRD patterns of Sb 2 S 3 and Sb 2 Se 3 are also included in Figure a, where the Sb 2 S 3 film was synthesized by CBD method and the Sb 2 Se 3 was synthesized by selenization of the CBD‐prepared Sb 2 S 3 film in selenium vapor at 400 °C for 10 min. The detailed peak index is shown in Figure a, confirming the formation of orthorhombic stibnite crystal structures . It is also observed that from Sb 2 S 3 to Sb 2 (S 1−x Se x ) 3 and Sb 2 Se 3 , the characteristic diffraction peaks shift toward low diffraction angle.…”
Section: Methodssupporting
confidence: 54%
“…One of the basic criteria for obtaining high PCE is to acquire high V OC and J SC simultaneously. Considering that Sb 2 S 3 and Sb 2 Se 3 are isomorphous possessing the same space group and nearly identical unit‐cell parameters, the synthesis of alloy type Sb 2 (S 1−x Se x ) 3 with tunable bandgap is feasible . This compositional manipulation offers an opportunity to improve J SC or V OC by simply increasing or decreasing Se ratio in the Sb 2 (S 1−x Se x ) 3 alloy film.…”
Section: Methodsmentioning
confidence: 99%
“…These results suggest successful partial selenization, i.e., the formation of Sb 2 (S 1−x Se x ) 3 . However, XRD characterization alone cannot manifest the detailed sulfur and selenium distributions in the film, the formation of homogenous alloy‐type Sb 2 (S 1−x Se x ) 3 could also lead to this kind of diffraction pattern . In this regard, we conducted depth profile analysis by using X‐ray photoelectron spectroscopy (XPS), where the surface sample was removed by sputtering with Ar + ion.…”
To efficiently convert solar energy into electricity at low cost with long‐term stability is one of the major tasks in solar cell research and applications. Antimony sulfide‐selenide [Sb2(S1−xSex)3] with a tunable bandgap in the range of 1.1–1.8 eV are considered promising photovoltaic materials due to their low‐toxicity, long‐term durability, and abundant element availability. Herein, selenium‐graded Sb2(S1−xSex)3 is synthesized through diffusion controlled solid‐state reaction between selenium and pre‐formed Sb2S3 film. In the device, sulfur‐rich Sb2(S1−xSex)3 with large bandgap leads to high voltage output, while narrow‐bandgap selenium‐rich Sb2(S1−xSex)3 expands spectral response toward longer wavelength. As a consequence, the device yields an open‐circuit voltage comparable to Sb2S3 solar cell, along with a significantly enhanced photocurrent density of 19.43 mA cm−2, finally delivering a certified power conversion efficiency of 5.71%, which is the highest certified value in planar heterojunction solar cells based on Sb2(S1−xSex)3. Initial stability examination shows that the device can maintain 88% efficiency after storing for 90 days in moderate humidity and ambient light irradiation. This investigation offers an effective strategy to the fabrication of composition‐graded Sb2(S1−xSex)3 for long‐term stable devices. The methodology may be extended for the fabrication of a broad class of composition‐graded metal sulfide/selenide for solar cell performance enhancement.
“…The absorbing edges of the annealed and selenized samples were shifted from 500 nm to 650 and 850 nm, respectively. Because both Sb 2 S 3 and Sb 2 Se 3 are direct band gap semiconductor [24, 25], the average band gap could be calculated by the formula:Fig. 3Photoelectric properties of Sb 2 S 3 QD thin films.…”
Antimony sulfide (Sb2S3) has been applied in photoelectric devices for a long time. However, there was lack of information about Sb2S3 quantum dots (QDs) because of the synthesis difficulties. To fill this vacancy, water-soluble Sb2S3 QDs were prepared by hot injection using hexadecyltrimethylammonium bromide (CTAB) and sodium dodecyl sulfate (SDS) mixture as anionic-cationic surfactant, alkanol amide (DEA) as stabilizer, and ethylenediaminetetraacetic acid (EDTA) as dispersant. Photoelectric properties including absorbing and emission were characterized by UV-Vis-IR spectrophotometer and photoluminescence (PL) spectroscopic technique. An intensive PL emission at 880 nm was found, indicating Sb2S3 QDs have good prospects in near-infrared LED and near-infrared laser application. Sb2S3 QD thin films were prepared by self-assembly growth and then annealed in argon or selenium vapor. Their band gaps (Egs) were calculated according to transmittance spectra. The Eg of Sb2S3 QD thin film has been found to be tunable from 1.82 to 1.09 eV via annealing or selenylation, demonstrating the good prospects in photovoltaic application.
“…In particular, superstrate and substrate ssSCs assembled with antimony sulfide (Sb 2 S 3 ) and antimony selenides (Sb 2 Se 3 ) have attained good stability and significant conversion efficiency of solar radiation under standard condition of up to 6% . Recently, Sb 2 (S x Se 1‐ x ) 3 alloy films obtained from different synthetic processes with varying composition and easily tunable band gap ( E g ) from 1 to 1.8 eV have emerged as promising absorber materials …”
Appropriate selection of electron buffer layer and understanding its impact on the photo‐generated charge transfer dynamics at the interfaces are critical to enhance the efficiency of solar cells. By optimizing a multilayer electron buffer composed of CdS thin film deposited on TiO2 compact layer, we obtained a power conversion efficiency (PCE) of 5.47% for a planar solar cell of Sb2(SxSe1‐x)3 absorber. The PCE was significantly enhanced in the photovoltaic parameters of planar solar cells fabricated with single‐layer configuration: for example, PCE of 3.99% and 0.79% were obtained when either CdS or TiO2, respectively, were used. Surface photovoltage spectroscopy, transient photovoltage, and electrochemical impedance spectroscopy analyses indicated that the PCE improvement can be ascribed to a combination of 2 factors: (i) better separation and transfer of the photo‐excited free charge, provided by the beneficial energy level alignment between TiO2 and CdS layers, and (ii) sulfur passivation upon incorporation of CdS in a multilayer configuration causing a reduction in the trap states at the interface with Sb2(SxSe1‐x)3.
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