Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

Patzke, Greta R.; Kontic, Roman; Shiolashvili, Z.; Makhatadze, Nino; Jishiashvili, D.

doi:10.3390/ma6010085

Cited by 8 publications

(6 citation statements)

References 51 publications

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“…The used Si(111) substrate shows only one main peak at 28.43°. For InP nanowires grown at 550 °C, additional peaks at 33.08°, 43.61°, 51.71°, 58.93°, and 63.52° are observed and are ascribed to (200), (220), (311), (222), (400) planes of ZB InP [ 45 ]. For the InGaP nanowires, the XRD spectra of nanowires grown at all the investigated conditions (either temperature-dependent or Ga weight dependent) are quite similar with nearly the same peak position, peaking at 32.64°, 46.93°, 55.80°, and 58.93°.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

et al. 2021

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Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

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Section: Resultsmentioning

confidence: 99%

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

et al. 2021

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“…The surface characteristics of the QD samples were investigated using XRD to understand the mechanism by which the ligand length influences inter-QD energy transfer dynamics. The XRD patterns of OA-InP, DA-InP, and HA-InP were experimentally measured and compared with the predicted peaks of zinc-blended InP, represented by blue bars (reference pattern: ISCD 1600543) in Figure 5 A−C [ 46 , 47 , 48 ]. Here, Gaussian peaks were used as an approximation to deconvolute the XRD patterns.…”

Section: Resultsmentioning

confidence: 99%

Charge Injection and Energy Transfer of Surface-Engineered InP/ZnSe/ZnS Quantum Dots

Park

Kim

2023

Nanomaterials

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Surface passivation is a critical aspect of preventing surface oxidation and improving the emission properties of nanocrystal quantum dots (QDs). Recent studies have demonstrated the critical role of surface ligands in determining the performance of QD-based light-emitting diodes (QD-LEDs). Herein, the underlying mechanism by which the capping ligands of InP/ZnSe/ZnS QDs influence the brightness and lifetime of the QD-LEDs is investigated. The electrochemical results demonstrate that highly luminescent InP/ZnSe/ZnS QDs exhibit modulated charge injection depending on the length of the surface ligand chains: short alkyl chains on the ligands are favorable for charge transport to the QDs. In addition, the correlation between the spectroscopic and XRD analyses suggests that the length of the ligand chain tunes the ligand–ligand coupling strength, thereby controlling the inter-QD energy transfer dynamics. The present findings shed new light on the crucial role of surface ligands for InP/ZnSe/ZnS QD-LED applications.

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“…The detailed analysis of complex reactions which leads to the synthesis of Ge 3 N 4 nanowires forms a separate scientific task which is under study at present. Some details of the previously described new technology are presented elsewhere [15,17]. The morphology and structure of NWs were studied using FEI Quanta FEG 600 Scanning Electron Microscope (SEM) and Philips CM200 FEG Transmission Electron Microscope (TEM).…”

Section: Methodsmentioning

confidence: 99%

Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium

Jishiashvili

Kiria

Shiolashvili

et al. 2013

Journal of Nanoscience

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We report on the growth mechanisms of germanium nitride nanowires on the surface of crystalline Ge annealed in hydrazine vapor at different temperatures. In spite of the presence of water (and hence oxygen precursors) in hydrazine, the pure germanium nitride single crystal nanowires were produced in the temperature range of 480–580°C. At temperatures below 520°C, the GeOx clusters were formed first at the Ge surface, followed by the nucleation and growth of nanowires through the Vapor-Liquid-Solid mechanism. The Vapor-Solid growth mechanism was observed at temperatures exceeding 520°C, and Ge3N4 nanobelts were produced instead of nanowires with circular cross-sections. All nanostructures have the alpha germanium nitride structure; however, at the nucleation stage, the presence of beta Ge3N4 phase was also observed in the roots of nanowires.

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Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

Cited by 8 publications

References 51 publications

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Charge Injection and Energy Transfer of Surface-Engineered InP/ZnSe/ZnS Quantum Dots

Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium

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