Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium

Abstract

We report on the growth mechanisms of germanium nitride nanowires on the surface of crystalline Ge annealed in hydrazine vapor at different temperatures. In spite of the presence of water (and hence oxygen precursors) in hydrazine, the pure germanium nitride single crystal nanowires were produced in the temperature range of 480–580°C. At temperatures below 520°C, the GeOx clusters were formed first at the Ge surface, followed by the nucleation and growth of nanowires through the Vapor-Liquid-Solid mechanism. The Vapor-Solid growth mechanism was observed at temperatures exceeding 520°C, and Ge3N4 nanobelts were produced instead of nanowires with circular cross-sections. All nanostructures have the alpha germanium nitride structure; however, at the nucleation stage, the presence of beta Ge3N4 phase was also observed in the roots of nanowires.

First-principles investigation of structural, Raman and electronic characteristics of single layer Ge3N4

“…In order to produce smaller devices, thin, stable, durable and electrically tunable materials are required. Although, various nanostructural forms of germanium nitrides, such as nanobelts, have been reported in the sizes of 30 to 300 nm in width both in α-Ge 3 N 4 and β-Ge 3 N 4 phases [41][42][43], its 2D single-layer form has not been investigated to date.…”