Hybridization of SOAs on Si platform for routing applications

Keller, D.; Aribaud, P.; Auvinet, D.; DiMaggio, M.; Dorgeuille, F.; Drocourt, C.; Legat, D.; Dhalluin, V.; Pommereau, F.; Porcheron, C.; Prunaire, M.; Piatti, P.; Remy, J.C.; Renaud, M.; Sahri, N.; Silvestre, S.; Squedin, S.; Goth, A.; Scherb, J.

doi:10.1109/iciprm.2002.1014468

Cited by 4 publications

(4 citation statements)

References 11 publications

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“…Technological development and performances evaluation of SOAs have already been demonstrated in several papers but few results have been reported on device robustness and reliability aspects [3,6]. In this study, reliability investigations have been conducted on two different wafers from two epitaxy batches (wafer 1 and wafer 2) with technological differences essentially based on contact nature Ti/Pt/Au contact (wafer 1) and Ti/Pt/Ti/Au contact (wafer 2).…”

Section: Reliability Investigationsmentioning

confidence: 98%

“…The width and the thickness of the active zone are respectively 1.2 µm and 0.21 µm. Polarization independence is obtained by means of an optimized tensile strained bulk Separate Confinement Heterostructure (SCH) inducing a single-pass travelling wave amplifier (TWA) TE/TM gain difference lower than 1 dB [3]. After formation, waveguides are overgrown with p-doped InP followed by a p-doped InGaAs contact layer.…”

Section: Device Technology and Physical Principlesmentioning

confidence: 99%

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Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier

Huyghe

Béchou

Zerounian

et al. 2005

Microelectronics Reliability

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Section: Reliability Investigationsmentioning

confidence: 98%

Section: Device Technology and Physical Principlesmentioning

confidence: 99%

Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier

Huyghe

Béchou

Zerounian

et al. 2005

Microelectronics Reliability

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“…3), hybrid integration and pig-tailing of active and passive devices onto SiO 2 /Si mother boards bring what appears as the proper solution to the functional and technological variety of devices based on different material systems (GaAs, InP, LiNbO 3 , glass, polymers, etc.) to be integrated [8].…”

Section: Low-cost Techniquesmentioning

confidence: 99%

“…The Semiconductor Optical Amplifier (SOA), used as an optical gate can bring the right solution. For the fabrication of switching matrices with sufficient capacity, SOA arrays are needed, integrated on a SiO 2 /Si mother-board for instance [8].…”

Section: Switching Soa Gate Arraysmentioning

confidence: 99%

Active opto-electronic components

Carenco¹,

Scavennec²

2003

Comptes Rendus. Physique

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Opto-electronics has played a key role in long-distance cabled communications by offering high-performance, easy-to-use, compact devices at acceptable cost. Spreading throughout metropolitan networks and access networks and more generally facing the increasing demand for less expensive and wider bandwidth call for new functionalities and improved technologies. This evolution covers all fibre network components and their management: signal propagation and processing along fiber, optoelectronic interfaces, electronic processing, . . . Issues, progress and perspectives of devices as enablers of capacity, flexibility and cost reduction are addressed.

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