Reliability investigations of 1.55 μm bulk semiconductor optical amplifier using functional parameter measurements

Huyghe, S.; Béchou, Laurent; Danto, Yves; Laffitte, D.; Boddaert, X.; Volto, Patricia; Denolle, A.; Coquelin, A.; Ollivier, C.; Keller, D.; Porcheron, C.; Crottini, A.; Squedin, S.; Renaud, M.

doi:10.1109/iciprm.2003.1205341

International Conference onIndium Phosphide and Related Materials, 2003.

DOI: 10.1109/iciprm.2003.1205341

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Reliability investigations of 1.55 μm bulk semiconductor optical amplifier using functional parameter measurements

S. Huyghe

Laurent Béchou

Yves Danto

et al.

Abstract: We report results of ageing tests (270mA, 100OC) applied to 1.55 pm Semiconductor Optical Amplifier (SOA) of 500pm length active region for reliability investigations and show the strong relationship between functional parameters and their drifts versus ageing time.

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Reliability investigations of 1.55 μm bulk semiconductor optical amplifier using functional parameter measurements

Abstract: We report results of ageing tests (270mA, 100OC) applied to 1.55 pm Semiconductor Optical Amplifier (SOA) of 500pm length active region for reliability investigations and show the strong relationship between functional parameters and their drifts versus ageing time.

Cited by 0 publications

References 3 publications

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