Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS<sub>2</sub>

Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

doi:10.1002/adma.201602157

Cited by 62 publications

(72 citation statements)

References 47 publications

(80 reference statements)

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“…Interestingly, the I DS as a function of back gate voltage (V BG ) show an unusual dip at the highest conductance value on top of the usual antiambipolar nature. [15][16][17][18][19][20][21] We further show that the magnitude and the position of the dip in I DS -V BG curve can be modulated by changing the incident power density of light. This unique observation can be explained by including interlayer recombination rate of charge carriers along with the individual layer response.…”

Section: Introductionmentioning

confidence: 93%

“…These TMD-based vertical heterostructures have shown potentials as p-n junction and most of these p-n junctions show antiambipolar transconductance behavior. [15][16][17][18][19][20][21] However, p-n junction made of single layer of TMDs, known as atomically thin p-n junctions, [22][23][24][25] show quite different type of charge transport mechanism compared to the conventional p-n junction. Here, transport occurs via tunneling of carriers from one layer to the other layer.…”

Section: Introductionmentioning

confidence: 99%

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Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

et al. 2017

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Fabrication of the out-of-plane atomically sharp p-n junction by stacking two dissimilar two-dimensional materials could lead to new and exciting physical phenomena. The control and tunability of the interlayer carrier transport in these p-n junctions have a potential to exhibit new kind of electronic and optoelectronic devices. In this article, we present the fabrication, electrical, and optoelectrical characterization of vertically stacked few-layers MoTe 2 (p)-single-layer MoS 2 (n) heterojunction. Over and above the antiambipolar transfer characteristics observed similar to other hetero p-n junction, our experiments reveal a unique feature as a dip in transconductance near the maximum. We further observe that the modulation of the dip in the transconductance depends on the doping concentration of the two-dimensional flakes and also on the power density of the incident light. We also demonstrate high photo-responsivity of~10 5 A/W at room temperature for a forward bias of 1.5 V. We explain these new findings based on interlayer recombination rate-dependent semi-classical transport model. We further develop first principles-based atomistic model to explore the charge carrier transport through MoTe 2 -MoS 2 heterojunction. The similar dip is also observed in the transmission spectrum when calculated using density functional theory-non-equilibrium Green's function formalism. Our findings may pave the way for better understanding of atomically thin interface physics and device applications.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

et al. 2017

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“…[38] This property was currently regarded as one of the most intriguing possibilities in the realization of new devices, since the electron coupling at the interface with bulk and multistacked bidimensional materials was similarly affected. [39,40] Along this line, recently Wang et al [41] developed a device based on the junction of 1, 3, and 7 layered MoS 2 single crystals and a novel p-type large bandgap semiconductor, tin monoxide (SnO, 0.65-0.7 eV indirect [42] and 2.65-2.92 eV direct band gap [43] ). In the same paper ( Figure 6; Figure S4, Supporting Information), EFM measurements showed an asymmetric distribution of the electric field at the MoS 2 edges for different crystal orientations, possibly due to the different terminations at the borders caused by the mechanical exfoliation method used to produce high mobility single crystals.…”

Section: Hot Electron Setupmentioning

confidence: 99%

Experimental Route to Scanning Probe Hot‐Electron Nanoscopy (HENs) Applied to 2D Material

Giugni

Torre

Allione

et al. 2017

Advanced Optical Materials

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This paper presents details on a new experimental apparatus implementing the hot electron nanoscopy (HENs) technique introduced for advanced spectroscopies on structure and chemistry in few molecules and interface problems. A detailed description of the architecture used for the laser excitation of surface plasmons at an atomic force microscope (AFM) tip is provided. The photogenerated current from the tip to the sample is detected during the AFM scan. The technique is applied to innovative semiconductors for applications in electronics: 2D MoS2 single crystal and a p‐type SnO layer. Results are supported by complementary scanning Kelvin probe microscopy, traditional conductive AFM, and Raman measurements. New features highlighted by HEN technique reveal details of local complexity in MoS2 and polycrystalline structure of SnO at nanometric scale otherwise undetected. The technique set in this paper is promising for future studies in nanojunctions and innovative multilayered materials, with new insight on interfaces.

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“…Compared with 2D materials, oxides can be easily deposited with few processes and at a low cost. In SnO and at the MoS2 p-n junction, the electron-hole separation depends on the depletion area [110]. The diode can be utilized to perform a rectification (high forward to reverse current ratio as 9.3 × 10 3 ) with a good laser response.…”

Section: Sensing and Detectionmentioning

confidence: 99%

“…Another novel application based on a photoelectric process is photoconductive switches [110]. Under a 2-mW light, the photoresponsivity (the ratio of generated photocurrent to the light power absorbed by the device channel) of BP/SrTiO 3 is 2.5 A/W.…”

Section: Sensing and Detectionmentioning

confidence: 99%

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

2017

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Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS 2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

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Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS₂

Cited by 62 publications

References 47 publications

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Experimental Route to Scanning Probe Hot‐Electron Nanoscopy (HENs) Applied to 2D Material

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

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Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS2

Cited by 62 publications

References 47 publications

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Experimental Route to Scanning Probe Hot‐Electron Nanoscopy (HENs) Applied to 2D Material

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

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Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS₂