Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers

Choi, Hyun‐Seok; Shin, Joong-Won; Hong, Eun-Ki; Hwang, Inchan; Cho, Won-Ju

doi:10.1063/1.5060627

Cited by 8 publications

(3 citation statements)

References 32 publications

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“…We next examine the principal performance parameters of flexible CNT TFTs in the context of previously reported CNT TFT design trade-off relation-ships. [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55] Figure 7a-c shows on/off ratios plotted as a function of normalized g m , V th , and parallel-plate field-effect mobility (µ), respectively. It can be clearly seen that the performance of our LM-CNT device exhibit R e t r a c t e d significantly higher transconductance and low-voltage operation while maintaining a large on/off ratio of >10 5 due to the combined high-conductance and flexibility.…”

Section: Flexible and High-performance Lm-cnt Tftsmentioning

confidence: 99%

Retracted: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices

Liu

2020

Adv Elect Materials

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Latest progress in research and development of advanced materials containing single‐walled carbon nanotubes (SWCNTs) has considerably improved their wide‐spread and large‐scale practical applications in cutting‐edge electronic devices. One difficult challenge lies in the controllable fabrication of large arrays of very well aligned SWCNTs with a predetermined direction and density. Here, a printing technique that precisely implements accurate long‐range SWCNT self‐assembly on SiO2/Si substrates modified with octadecyltrichlorosilane (OTS) is introduced. The process is performed using a potential microflow inside SWCNT suspensions on a smooth hydrophobic OTS‐treated surface. Such printing strategy can be further developed to align and assemble other various nanotubes and nanowires. In particular, the CNT array and the newly emerging room‐temperature liquid metal (LM) with intrinsically excellent conductivity and enormous bendability are successfully combined for the first time. This enabled direct making of the first ever printed high‐performance LM–aligned SWCNT solar cells, transistors, and optoelectronic devices with excellent flexibility. In addition, the realized devices are rather uniform over large areas, which is one of the most important requirements for mass production. The present achievement suggests an important way toward low cost and large‐scale manufacturing of next generation flexible electronic devices, and also will significantly advance LM integrated functional electronics.

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Section: Flexible and High-performance Lm-cnt Tftsmentioning

confidence: 99%

Retracted: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices

Liu

2020

Adv Elect Materials

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“…[ 18,19 ] However, some promising work has been conducted to leverage the benefits of CMOS with UWBG semiconductors, such as IGZO and In 2 O 3 , by constructing them using p‐type NBG materials such as p‐Si, tin(II) oxide (SnO), or single‐walled carbon nanotubes. [ 20–23 ] Moreover, a few successful applications of monolithic GaN CMOS have been reported. [ 24,25 ] However, for semiconductors such as Ga 2 O 3 and AlN, which have an even wider bandgap than GaN, achieving p‐type doping has proven to be exceedingly difficult, and no proper p‐type alternatives have been reported yet.…”

Section: Introductionmentioning

confidence: 99%

Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

Chettri,

Mainali,

Xiao

et al. 2024

Physica Status Solidi (b)

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Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n‐type metal–oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for their potential applications in the rapidly developing field of electronics. This review comprehensively examines the role of n‐MOS inverters underpinned by WBG and UWBG semiconductors and their application possibilities. It delves into various n‐MOS inverter topologies, including resistive, enhancement or diode‐load, depletion‐load, and pseudo‐complementary MOS inverter topologies. Each topology's operational principles, unique advantages, and potential performance are elucidated in detail. Finally, these topologies are simulated using the Advanced Design System software for a fair comparison between various topologies. The literature and simulation results show that the pseudo‐D topology has the best gain and improved noise margin. The review methodology involves an extensive exploration of WBG/UWBG n‐MOS inverters to advance the current understanding of WBG/UWBG n‐MOS‐based ICs.

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“…While IGZO has excellent electrical properties among many oxide semiconductors, electrospun IGZO nanofibres are attractive materials with high flexibility and large specific surface area in one-dimensional (1D) form 12 . However, electrospun IGZO nanofibres require high temperature calcination annealing to vaporize the polymer matrix and high temperature post deposition annealing (PDA) to remove defects in the metal oxides and to improve the electrical properties 9,10,13 . These high temperature thermal processes deliver a large thermal budget to the device, which is the biggest limitation for flexible and stretchable device applications.…”

mentioning

confidence: 99%

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O2 mixed-plasma surface treatment

Cho

2020

Sci Rep

Self Cite

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In this study, we present a low thermal budget microwave annealing (MWA) method for calcination of electrospun In-Ga-ZnO (IGZO) nanofibres and demonstrate an improvement in the performance of IGZO nanofibre field-effect transistors (FETs) by Ar/O 2 mixed-plasma surface treatment. The IGZO nanofibres were fabricated by electrospinning method and calcined using MWA method. This process allowed for a significant reduction in the heat treatment temperature and time. Subsequently, plasma surface treatment using various ratios of Ar/O 2 gas mixtures was carried out. The surface morphology and chemical composition of MWA-calcined and plasma-treated IGZO nanofibres were studied by SEM and XPS analysis. In order to investigate the effects of MWA calcination combined with Ar/O 2 mixedplasma treatment on the electrical properties and the reliability of nanofibres-based transistors, IGZO nanofibres FETs were fabricated and applied to resistor-loaded inverters. Our results show that the O 2 plasma treatment significantly improves the performance of IGZO nanofibres FETs and the resistorloaded inverters based on IGZO nanofibres FETs, whereas Ar plasma treatment degrades the performance of these devices. The instability tests using positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS) revealed that the O 2 plasma treatment contributed to the stability of IGZO nanofibres FETs. Our results suggest that the MWA calcination combined with the Ar/O 2 mixed-plasma surface treatment is a promising technique for the fabrication of high performance IGZO nanofibres FETs with low thermal budget processes. Recently, the application of amorphous oxide semiconductors (AOS) as backplanes for the thin film transistors (TFTs) of active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diode displays (AMOLEDs) has been an actively researched topic owing to its advantages over the currently existing technology 1,2. Especially, amorphous indium gallium zinc oxide (a-IGZO) TFTs exhibit higher mobility than amorphous silicon (a-Si:H) TFTs, and they possess a superior uniformity compared with the polycrystalline silicon (poly-Si) TFTs because of their amorphous structure 3-5. In addition, a-IGZO has a wide band gap and high transmittance in the visible region, which makes it easy to access transparent optoelectronics 6,7. Despite these advantages, achieving a desired flexibility and stretchability in a-IGZO films still remains challenging. In addition, IGZO deposited by vacuum equipment, such as radio frequency (RF) magnetron sputtering, chemical vapor deposition (CVD) or atomic-layer-deposited (ALD), requires expensive equipment, and is disadvantageous for long process time and large area deposition. Recent intensive efforts have been focussed on the fabrication of IGZO nanofibres for their applications in the next-generation electronics, which are more flexible and stretchable 8-10. Electrospinning is one of the most commonly used manufacturing methods of nanofibres owing to its low manufac...

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Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers

Cited by 8 publications

References 32 publications

Retracted: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices

Retracted: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices

Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O2 mixed-plasma surface treatment

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