Hybrid Resonant Coupling Modulator in Vertically-Integrated Silicon on Silicon Nitride Platforms

Hosseinnia, Amir H.; Sodagar, Majid; Mousavi, S. Hamed Shams; Eftekhar, Ali A.; Adibi, Ali

doi:10.1364/cleo_si.2016.stu1e.6

Cited by 1 publication

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is a fundamental limitation and is valid for all conventional resonant modulator designs where the cavity resonance (or loss) are modulated. However, this limitation is broken when the coupling strength between the waveguide bus to the resonator is modulated instead of the resonance frequency of the resonator itself [32][33][34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Coupling-enhanced dual ITO layer electro-absorption modulator in silicon photonics

Tahersima

Gui

et al. 2019

Nanophotonics

View full text Add to dashboard Cite

Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However, the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits on-chip scaling density. To address these limitations, here we experimentally demonstrate a coupling-enhanced electroabsorption modulator by heterogeneously integrating a novel dual-gated indium-tin-oxide (ITO) phase-shifting tunable absorber placed at a silicon directional coupler region. Our experimental modulator shows a 2 dB extinction ratio for a just 4 µm short device at 4 volt bias. Since no material nor optical resonances are deployed, this device shows spectrally broadband operation as demonstrated here across the entire C-band. In conclusion we demonstrate a modulator utilizing strong index-change from both real and imaginary part of active material enabling compact and high-performing modulators using semiconductor foundry-near materials.

show abstract