Hybrid lithography optimization with E-Beam and immersion processes for 16nm 1D gridded design

Du, Yuelin; Wong, D.F.; Chao, Kai-Yuan

doi:10.1109/aspdac.2012.6165047

Cited by 43 publications

(31 citation statements)

References 10 publications

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“…Decomposition techniques have been proposed for different kinds of MPL [9]- [11] and complementary lithography [12]- [14]. Due to the unique characteristics of the DSA process, the DSA-MP complementary scheme faces its own challenges.…”

Section: Introductionmentioning

confidence: 99%

Contact layer decomposition to enable DSA with multi-patterning technique for standard cell based layout

Xiao

Lin

Wong

2016

2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)

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Multiple patterning lithography has been widely adopted for today's circuit manufacturing. However, increasing the number of masks will make the manufacturing process more expensive. More importantly, towards 7 nm technology node, the accumulated overlay in multiple patterning will cause unacceptable edge placement error (EPE). Recently, directed self-assembly (DSA) has been shown to be an effective lithography technology that can pattern contact/via/cuts with high throughput and low cost. DSA is currently aiming at 7 nm technology, where the guiding template generation needs either double patterning EUV or multiple patterning DUV process. By incorporating DSA into the multiple patterning process, it is possible to reduce the number of masks and achieve a cost effective solution. In this paper, we study the decomposition problem for contact layer in rowbased standard cell layout with DSA-MP complementary lithography. We explore several heuristic-based approaches, and propose an algorithm that decomposes a standard cell row optimally in polynomial-time. Our experiments show that our algorithm guarantees to find a minimum cost solution if one exists, while the heuristic cannot or only finds a sub-optimal solution. Our results show that the DSA-MP complementary approach is very promising for the future advanced nodes.

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Section: Introductionmentioning

confidence: 99%

Contact layer decomposition to enable DSA with multi-patterning technique for standard cell based layout

Xiao

Lin

Wong

2016

2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)

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“…Fig. 12 (b), line-end extensions can be performed to enable cut merging and E-beam-friendly cut shapes, which provides much better tip-to-tip control compared to single patterning [7], [10]. Recently, DSA has been shown as a promising lithography candidate to print small layout patterns.…”

Section: Cut/trim Mask Redistributionmentioning

confidence: 99%

“…As shown in Fig. 12 Post-routing decomposition with line-end extensions, (a) target patterns, (b) 193 nm cut [16], [56], (c) E-beam cut [7], [10], (d) guiding template with DSA cut [61]. Fig.…”

Section: Cut/trim Mask Redistributionmentioning

confidence: 99%

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Toward Unidirectional Routing Closure in Advanced Technology Nodes

Pan

2017

IPSJ Transactions on System LSI Design Methodology

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Abstract:In advanced technology nodes, unidirectional layout is strongly preferred for high-density metal layers for better manufacturability. The lithography printing of unidirectional layout can be tightly controlled with illumination source optimization and resolution enhancement techniques. Meanwhile, with the unidirectional layout, self-aligned double and quadruple patterning can be applied to achieve finer pitches beyond the resolutions limits of 193 nm lithography tools. However, unidirectional layout style introduces significant impacts on the physical design flow. Notably, unidirectional routing limits the standard cell pin accessibility, which makes manual cell layout design and optimization more and more challenging under modern standard cell architecture. In the routing phase, routing densities and resource competitions on lower metal layers are becoming increasingly high, where intelligent approaches are needed to resolve routing resource competitions for unidirectional routing closure. Moreover, post-routing optimization is inevitable to avoid significant engineering-changing-efforts for unidirectional routing under advanced manufacturing constraints. In this paper, we present a holistic approach, including standard pin access evaluation/optimization, pin access and routing co-optimization and post-routing optimization, to enable unidirectional routing closure in advanced technology nodes.

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“…The semiconductor industry encounters the limitation of manufacturing sub-22nm due to the delay of the next generation lithograph (NGL) such as extreme ultraviolet (EUV) and E-beam direct write [1]. To bridge the gap, double patterning lithography (DPL) is adopted, which decomposes a single layer into two masks (colors) to increase the pitch and enhance the resolution [2].…”

Section: Introductionmentioning

confidence: 99%

Triad

Lin

Pan

et al. 2012

Proceedings of the International Conference on Computer-Aided Design

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Abstract-TPL-friendly detailed routers require a systematic approach to detect TPL conflicts. However, the complexity of conflict graph (CG) impedes directly detecting TPL conflicts in CG. This work proposes a token graph-embedded conflict graph (TECG) to facilitate the TPL conflict detection while maintaining high coloring-flexibility. We then develop a TPL aware detailed router (TRIAD) by applying TECG to a gridless router with the TPL stitch generation. Compared to a greedy coloring approach, experimental results indicate that TRIAD generates no conflicts and few stitches with shorter wirelength at the cost of 2.41× of runtime.

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Hybrid lithography optimization with E-Beam and immersion processes for 16nm 1D gridded design

Cited by 43 publications

References 10 publications

Contact layer decomposition to enable DSA with multi-patterning technique for standard cell based layout

Contact layer decomposition to enable DSA with multi-patterning technique for standard cell based layout

Toward Unidirectional Routing Closure in Advanced Technology Nodes

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