Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Abstract

In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III‐nitride semiconductors. In terms of photonics applications in the visible–UV spectral range, III‐nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)‐based micro‐light‐emitting diode (LED) technology for high‐resolution display, and UV photo‐detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano‐LEDs with integration of II–VI quantum dots by means of lithography and nano‐imprinting patterning techniques are demonstrated, and high‐performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal‐oxide‐semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance‐improved AlGaN UV solar‐blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record‐high avalanche gain of up to 1.6 × 105. These newest advances in nano/micro‐LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III‐nitride in cutting‐edge applications.

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

“…III-nitride semiconductors have a direct bandgap and their alloys can cover a wide spectral range from deep UV to near-infrared. [1][2][3][4] The tremendous success of III-nitride semiconductors is the invention and development of efficient InGaN-based blue/green LEDs, [5][6][7] which have been commercialized for many years and are widely used in illumination and display applications. [8][9][10] To date, violet and blue InGaN-based LEDs have achieved a high wall-plug efficiency (WPE) of 84% and 81%, respectively.…”

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

“…[5][6][7] Especially, Si-based SBPDs suffer serious thermal instability owing to the narrow bandgap, which suppresses their high-temperature applications. Advanced SBPDs based on wide bandgap (WBG) materials, such as MgZnO, [8] AlGaN, [9,10] diamond, [11] and Ga 2 O 3 , [12] are believed as subversive substitutes of Si-based SBPDs. Among the various WBG materials, Ga 2 O 3 is the most desirable candidate for SBPDs applications based on the facts that, i) its ultra-wide bandgap (4.5-4.9 eV) corresponds to the solar-blind region directly without the necessity of bandgap modulation by doping or alloying process; [13] ii) its high absorption coefficient for high-energy UV photons benefits outstanding sensitivity in solar-blind region; [14] iii) it balances high solar-bind response and material workability; [15] iv) its large-size bulk single crystals can be put into mass production by low-cost melt-grown methods; [16] and most importantly, v) it has high structural stability toward temperature, radiation, and electric field for harsh-environment application.…”

A Selective Etching Route for Large-Scale Fabrication of β-Ga2O3 Micro-/Nanotube Arrays

“…Nanomaterials 2021, 11, x FOR PEER REVIEW 8 of 10 novel and relatively simple, which can realize the control of the size, length, and wall thickness of the β-Ga2O3 tubular structure, providing possibilities for applications in catalytic, gas-sensing, optic, electronic, photochemical, and terahertz communications [17,[41][42][43][44]. The hybrid micro-/nanoLEDs with high-performance red/green/blue and white emissions have been demonstrated in our previous work [45,46]. The preparation of white light LEDs integrated with β-Ga2O3 micro-/nanotubes through photolithography and selective etching route is now undergoing.…”