Hybrid integration of GaAs quantum cascade lasers with Si substrates by thermocompression bonding

Andrijasevic, D.; Austerer, M.; Andrews, A. M.; Klang, P.; Schrenk, W.; Strasser, G.

doi:10.1063/1.2841635

Cited by 26 publications

(9 citation statements)

References 20 publications

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“…Several Au–Au bonding techniques have been investigated to achieve low-temperature bonding, including thermocompression bonding [6,7,8,9,10,11,12], atomic diffusion bonding [4,13,14], and surface activated bonding (SAB) [15,16,17,18,19]. With SAB, the surfaces to be bonded are activated by plasma pretreatment and then bonded at low temperature (<150 °C).…”

Section: Introductionmentioning

confidence: 99%

Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au–Au Bonding Using Ultrathin Au Films

et al. 2019

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Au–Au surface activated bonding is promising for room-temperature bonding. The use of Ar plasma vs. O2 plasma for pretreatment was investigated for room-temperature wafer-scale Au–Au bonding using ultrathin Au films (<50 nm) in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Destructive razor blade testing revealed that the bonding strength of samples obtained using Ar plasma treatment was higher than the strength of bulk Si (surface energy of bulk Si: 2.5 J/m2), while that of samples obtained using O2 plasma treatment was low (surface energy: 0.1–0.2 J/m2). X-ray photoelectron spectroscopy analysis revealed that a gold oxide (Au2O3) layer readily formed with O2 plasma treatment, and this layer impeded Au–Au bonding. Thermal desorption spectroscopy analysis revealed that Au2O3 thermally desorbed around 110 °C. Annealing of O2 plasma-treated samples up to 150 °C before bonding increased the bonding strength from 0.1 to 2.5 J/m2 due to Au2O3 decomposition.

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Section: Introductionmentioning

confidence: 99%

Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au–Au Bonding Using Ultrathin Au Films

et al. 2019

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“…The metal-mediated wafer-bonding technique is also widely used for optoelectronic device applications. [45,47,48,56,57,[152][153][154][155][156] For III-nitride semiconductor devices such as GaN and InGaN light sources, [47,48,154,156] the growth substrates are typically electrically insulating or difficult to apply low-resistivity Ohmic metal contacts. Therefore, transferring the optically active III-nitride layers onto electrically conductive substrates after epitaxial growth is often necessary.…”

Section: Metal-mediated Wafer Bondingmentioning

confidence: 99%

Semiconductor Wafer Bonding for Solar Cell Applications: A Review

Tanabe

2023

Adv Energy and Sustain Res

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Wafer bonding is a highly effective technique for integrating dissimilar semiconductor materials while suppressing the generation of crystalline defects that commonly occur during heteroepitaxial growth. This method is successfully applied to produce efficient solar cells, making it an important area of research for photovoltaic devices. In this article, a comprehensive review of semiconductor wafer‐bonding technologies is provided, focusing on their applications in solar cells. Beginning with an explanation of the thermodynamics of wafer bonding relative to heteroepitaxy, the functionalities and advantages of semiconductor wafer bonding are discussed. An overview of the history and recent developments in high‐efficiency multijunction solar cells using wafer bonding is also provided. Bonded solar cells made of various semiconductor materials are reviewed and various types of wafer‐bonding methods, including direct bonding and interlayer‐mediated bonding, are described. Additionally, other technologies that utilize wafer bonding, such as flexible cells, thin‐film transfer, and wafer reuse techniques, are covered.

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“…The heterogeneous integration of materially different optical components made with wide ranges of fabrication processes onto a single platform enables us to construct small, high-performance, and multifunctional optoelectronic devices. Although traditional bonding techniques such as fusion bonding [1], thermo-compression bonding [2], and eutectic bonding [3] are widely used, they typically require high-temperature treatment (> 300 • C), which generates serious problems such as defect diffusion, dopant diffusion, and the introduction of large thermal stresses caused by a mismatch in the coefficients of thermal expansion between dissimilar materials. Therefore, in recent years, lowtemperature bonding techniques have become very important integration methods to create unique device structures for a wide range of photonic applications [4].…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method

Higurashi

Okumura

Kunimune

et al. 2017

IEICE Trans. Electron.

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Wafers with smooth Au thin films (rms surface roughness: < 0.5 nm, thickness: < 50 nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70 MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.

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Hybrid integration of GaAs quantum cascade lasers with Si substrates by thermocompression bonding

Cited by 26 publications

References 20 publications

Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au–Au Bonding Using Ultrathin Au Films

Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au–Au Bonding Using Ultrathin Au Films

Semiconductor Wafer Bonding for Solar Cell Applications: A Review

Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method

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