2017 IEEE International Electron Devices Meeting (IEDM) 2017
DOI: 10.1109/iedm.2017.8268450
|View full text |Cite
|
Sign up to set email alerts
|

Hybrid III-V/Si DFB laser integration on a 220 mm fully CMOS-compatible silionn photonlcsplotform

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
7
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
4
4
1

Relationship

1
8

Authors

Journals

citations
Cited by 12 publications
(8 citation statements)
references
References 2 publications
1
7
0
Order By: Relevance
“…The thermal chromatic dispersion (i.e., the temperature-related wavelength shift) of the device itself when operating at increasing temperature is also important, as it impacts the flexibility of the device when operating in radically different environments, especially at the receiver side of the optical link. Recently, state-of-the-art SiN Mach-Zehnder multiplexers have been realized, with a reported thermal chromatic dispersion of 18.5 pm/°C [17]. Similar measurements were carried out on the SiN EGs presented in this paper, indicating an even lower thermal detuning coefficient, measured at below 13 pm/°C, as shown in the inset of Figure 3c.…”
Section: Cwdm Sin Echelle Grating Multiplexersupporting
confidence: 78%
See 1 more Smart Citation
“…The thermal chromatic dispersion (i.e., the temperature-related wavelength shift) of the device itself when operating at increasing temperature is also important, as it impacts the flexibility of the device when operating in radically different environments, especially at the receiver side of the optical link. Recently, state-of-the-art SiN Mach-Zehnder multiplexers have been realized, with a reported thermal chromatic dispersion of 18.5 pm/°C [17]. Similar measurements were carried out on the SiN EGs presented in this paper, indicating an even lower thermal detuning coefficient, measured at below 13 pm/°C, as shown in the inset of Figure 3c.…”
Section: Cwdm Sin Echelle Grating Multiplexersupporting
confidence: 78%
“…In the last few years, silicon platforms have been enriched with complementary functionalities by integrating other optically active materials into the platform, while preserving the complementary metal-oxide-semiconductor (CMOS) compatibility. For example, we have reported the heterogeneous integration of III-V materials in Si platforms to realize III-V/Si hybrid laser sources [15][16][17]. In addition, fast and efficient photodiodes can be obtained by…”
Section: Introductionmentioning
confidence: 99%
“…Wafer-scale integration is required to preserve the cost advantage of silicon photonics. A recent demonstration of wafer-scale heterogeneous integration of light-sources is reported in [190]. An incumbent technology that can provide wafer-scale integrated laser sources is micro-transfer-printing (µTP) [191].…”
Section: Open-access Modalitiesmentioning
confidence: 99%
“…While Ge-photodiodes have been successfully integrated in a SOI platform [15,[52][53][54], the integration of laser sources is still challenging [55]. Current approaches employ wafer-to-wafer [56,57] or die-to-wafer [14,58,59] bonding.…”
Section: System Integrationmentioning
confidence: 99%