Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Qin, Jiaqian; Hao, Yan; Qiu, Gang; Si, Mengwei; Miao, Peng; Duan, Yuqin; Shao, Wen‐Zhu; Zhen, Liang; Ye, Peide D.

doi:10.1007/s12274-019-2275-1

Cited by 36 publications

(26 citation statements)

References 44 publications

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“…Because of the chemical hybridization at the interface, the photodetectors based on Se/ReS 2 heterostructures exhibited excellent performance. They also obtained 1D t‐Se and 2D ReS 2 mixed‐dimensional heterostructures using epitaxial growth . The relative work offers a different angle to design high‐performance optoelectronics applications based on hybrid structures.…”

Section: Preparation Methodsmentioning

confidence: 99%

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Electronic and Optoelectronic Applications Based on ReS₂

Xiong

Chen

Zhang

et al. 2019

Physica Rapid Research Ltrs

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With continuous research into two‐dimensional transition metal dichalcogenides (TMDs), a great number of high‐performance devices are emerging due to the unique structures and versatile properties of TMDs. As a representative of the group‐VII TMDs, rhenium disulfide (ReS2) has attracted increasing attention because the distorted octahedral crystal structure makes it distinctive from more widely known TMDs members, such as MoS2 and WSe2. It features layer‐independent electrical and anisotropic optical properties which are suitable for the applications of field effect transistors (FETs) and photodetectors. This review focuses on the recent research work about the electronic and optoelectronic applications based on novel 2D ReS2. In the first part, the unique crystal structures and properties are introduced. This is followed by the various preparation methods. Next, high‐performance FETs and photodetectors based on ReS2 are presented. Finally, conclusions are drawn and prospects proposed.

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Section: Preparation Methodsmentioning

confidence: 99%

“…They also obtained 1D t-Se and 2D ReS 2 mixeddimensional heterostructures using epitaxial growth. [77] The relative work offers a different angle to design high-performance optoelectronics applications based on hybrid structures.…”

Section: Epitaxial Growth Of Res 2 -Based Heterostructuresmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on ReS₂

Xiong

Chen

Zhang

et al. 2019

Physica Rapid Research Ltrs

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“…6. Se-incorporated multidimensional nanomaterials for versatile applications, such as 1D Se@1D Te nanotubes for self-powered photodetectors, [140] Se-Te-Se multisegmented nanowires for glue functionality, [223] and 1D Se on few-layer ReS 2 film for 1D/2D mixed-dimensional phototransistor, [224] open up new opportunities to improve the device performance.…”

Section: Discussionmentioning

confidence: 99%

“…Therefore, improving the performance of Se nanomaterial‐based device by introducing heteroatoms by doping strategy or epitaxial growth technique is still of great interest to explore. Although Se nanomaterials have great potentials for commercialization in the near future due to the simple elemental composition and low toxicity toward healthy cells, yet too fast degradation still, more or less, limits the therapeutic effect. Therefore, it is still worthwhile to synthesize functional Se nanomaterials for both the best therapeutic efficacy and the lowest systemic toxicity. Understanding the relationship between Se‐based nanocomposites, e.g., Se/polymers and Se nanomaterial‐based drugs, and their intriguing applications in versatile fields, e.g., flexible devices and diagnostics and therapy, are still very important to provide fundamental guidance for new designs of modern devices. Se‐incorporated multidimensional nanomaterials for versatile applications, such as 1D Se@1D Te nanotubes for self‐powered photodetectors, [ 140 ] Se–Te–Se multisegmented nanowires for glue functionality, [ 223 ] and 1D Se on few‐layer ReS 2 film for 1D/2D mixed‐dimensional phototransistor, [ 224 ] open up new opportunities to improve the device performance.…”

Section: Discussionmentioning

confidence: 99%

Recent Advances in Semiconducting Monoelemental Selenium Nanostructures for Device Applications

Huang

Wang

et al. 2020

Adv Funct Materials

131

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Investigations into semiconductor nanomaterials from both an academic and industrial point of view are of great significance. Selenium (Se) nanostructures, as narrow bandgap semiconductors, have a variety of potential applications in the fabrication of many high-performance devices. The past decades have witnessed rapid development in new strategies for synthesizing Se nanostructures with controlled sizes, shapes, and structures, whose diverse structure-dependent nature enables functional Se nanomaterials to have great potentials for modern applications. This review focuses on the synthesis and morphology control of intriguing Se nanostructures, the latest progress in understanding the fundamental properties of Se nanostructures, and the recent advances in high-performance Se nanomaterial-based devices for diverse applications. Finally, the challenges and future opportunities for Se nanostructures and Se-related devices are also discussed.

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“…demonstrated a dual‐channel phototransistor based on 1D Se/2D ReS 2 heterostructures. [ 109 ] Compared with bare ReS 2 ‐based devices, the heterostructure photodetector exhibits significant enhancement with the responsivity up to 98 A W −1 at 400 nm light with power intensity of 1.7 mW cm −2 and fast response speed with rise time in 45 ms. Similar Se/InSe heterostructure is reported by Shang et al.…”

Section: Device Applications Of Group‐vi Elemental 2d Materialsmentioning

confidence: 99%

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Lin

Wang

Chai

2020

Small

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to micrometers or wafer scale. With different compositions and crystal structures, these 2D materials differ from each other in properties, offering wide range of material choices for diverse functionalities, including electronics, optoelectronics, sensors, energy conversion, and storage. [14-21] As Si transistors approach their scaling limit, the loss of gate electrostatic control on the nanoscale channel and the direct source-to-drain tunneling increase the off-state leakage currents, raise power dissipation, and thus severely degrade the performance of Si transistors. [22-25] Because of this scaling limit of Si transistors, exploration of new channel materials is of vital importance for future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, the emerging 2D materials are promising candidates for continuously downward scaling. [26] The diversity of 2D materials provides broad choices of semimetals (e.g., graphene), insulators (e.g., h-BN), and semiconductors (e.g., TMDs, BP, Se, Te). [8-13] The 2D semiconductors with thickness-dependent bandgaps have been regarded as potential channel materials for replacing Si. [26] The layered nature of 2D semiconductors allows consistent thickness control with atomic precision down to the monolayer limit, leading to enhanced electrostatic control of the gate and further scaling of transistors. Also, the pristine surfaces of 2D semiconductors are free of dangling bonds even down to monolayer limit. The pristine surfaces can give rise to low density of interface trap states and consequently reduce the charge scattering. Taking TMDs as an example, molybdenum disulfide (MoS 2), one of the most widely studied 2D semiconductors is a potential replacement for Si. [27-29] Based on theoretical calculation, 2D MoS 2 is predicted to have a direct source-to-drain tunneling leakage current two orders of magnitude smaller than that of Si. [22] For monolayer MoS 2 , the leakage current will not limit the scaling of transistors down to 1 nm gate length, which is superior to Si with a sub-5 nm scaling limit. [22] With the unique layer nature, 2D semiconductors alleviate the severe short channel effect. Therefore, 2D semiconductors have been regarded as potential options for transistors with ultimate thin channel. After realizing advantages of 2D semiconductors over Si, numerous research studies focus on searching for 2D semiconductors with high carrier mobility and an appropriate bandgap and exploring their usage in future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group-VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group-VI elemental 2D materials enable device applications including high-performance field-effect transistors and optoelectronic devices. ...

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Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Cited by 36 publications

References 44 publications

Electronic and Optoelectronic Applications Based on ReS₂

Electronic and Optoelectronic Applications Based on ReS₂

Recent Advances in Semiconducting Monoelemental Selenium Nanostructures for Device Applications

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

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Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Cited by 36 publications

References 44 publications

Electronic and Optoelectronic Applications Based on ReS2

Electronic and Optoelectronic Applications Based on ReS2

Recent Advances in Semiconducting Monoelemental Selenium Nanostructures for Device Applications

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

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Electronic and Optoelectronic Applications Based on ReS₂

Electronic and Optoelectronic Applications Based on ReS₂