Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors

Dahal, R.; Tahtamouni, T. M. Al; Fan, Zhaoyang; Lin, J. Y.; Jiang, Hongxing

doi:10.1063/1.2752126

Cited by 46 publications

(26 citation statements)

References 23 publications

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“…Although Dahal et al reported in 2007 on a Schottky barrier photodiode of AlN grown on n-SiC [8], no measurements were made in the VUV region (< 200 nm).…”

Section: Introductionmentioning

confidence: 93%

UV/VUV photodetectors using group III‐nitride semiconductors

Saito¹,

Hitora

et al. 2009

Phys. Status Solidi (c)

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Schottky barrier photodiodes based on AlN, AlxGa1–xN, GaN, and InyGa1–yN were fabricated with different compositions. In addition, novel types of UV detectors with narrow spectral bandwidths were developed by combining AlxGa1–xN Schottky barrier photodiodes and optical entrance windows made of AlyGa1–yN having exactly or nearly the same composition (y ≥ x). Their spectral responsivities were measured in the spectral range including the vacuum ultraviolet region. The results showed that the devices having a wide variety of cut‐off wavelengths and narrow spectral bandwidths were successfully fabricated and achieved a high out‐of‐band rejection ratio. In addition, satisfactory performances of low noise current, low temperature coefficient, and high stability to UV photons were confirmed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Although Dahal et al reported in 2007 on a Schottky barrier photodiode of AlN grown on n-SiC [8], no measurements were made in the VUV region (< 200 nm).…”

Section: Introductionmentioning

confidence: 93%

UV/VUV photodetectors using group III‐nitride semiconductors

Saito¹,

Hitora

et al. 2009

Phys. Status Solidi (c)

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“…6͒ and metalsemiconductor-metal and Schottky barrier photodetectors for DUV and extreme UV device applications. [7][8][9] The availability of device quality AlN epilayers also opens up new opportunities for probing fundamental parameters in AlN to a degree previously unattainable. Due to the ionic nature of III-nitrides, Frohlich interaction, which is the Coulomb interaction between electrons ͑holes͒ and longitudinal electric field produced by the zone-center longitudinal optical ͑LO͒ phonons, is stronger compared to deformation-potential or piezoelectric interaction in these materials.…”

Section: Probing Exciton-phonon Interaction In Aln Epilayers By Photomentioning

confidence: 99%

Probing exciton-phonon interaction in AlN epilayers by photoluminescence

Sedhain

Lin

et al. 2009

Applied Physics Letters

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Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy has been employed to investigate the exciton-phonon interaction in AlN. Longitudinal optical (LO) phonon replicas of free exciton recombination lines were observed in PL emission spectra, revealing the coupling of excitons with LO phonons. We have quantified such interaction by measuring Huang–Rhys factor based on polarization resolved DUV PL measurements. It was observed that the exciton-phonon coupling strength in AlN depends on the polarization configuration and is much larger in the direction with the electrical field (E⃗) of the emitted light perpendicular to the wurtzite c-axis (E⃗⊥c⃗) than in the direction of E⃗∥c⃗. Furthermore, a larger coupling constant was also measured in AlN than in GaN. The large effective hole to electron mass ratio in AlN, especially in the E⃗⊥c⃗ configuration, mainly accounts for the observed results.

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“…Among them, SiC (Wright & Horsfall 2007), GaN (Monroy et al 1999) and II-VI compound-based detectors (Sou et al 2001) show a photodetector cut-off wavelength longer than 300 nm, whereas cBN , AlN (Butun et al 2006;Li et al 2006;Dahal et al 2007;BenMoussa et al 2008) and diamond-based (Adam et al 2004;Balducci et al 2005 By their nature, cBN, AlN and diamond semiconductors are the primary choice as the photosensitive materials for solar EUV and VUV photon detection (spectral range of interest 10 k 200 nm) and meet the requirements for UV radiometers planned to study the Sun since they provide high radiation hardness, near-ultraviolet (NUV) and visible-blindness (wavelength cut-off value 225 nm), mechanical, chemical and thermal stability and no need of cooling system (i.e., roomtemperature operation).…”

Section: Photodetectorsmentioning

confidence: 99%

New observation strategies for the solar UV spectral irradiance

Cessateur

Lilensten

Wit

et al. 2012

J. Space Weather Space Clim.

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Many applications in space weather and in space situational awareness require continuous solar spectral irradiance measurements in the UV, and to a lesser degree in the visible band. Most space-borne solar radiometers are made out of two different parts: (i) a front filter that selects the passband and (ii) a detector that is usually based on silicon technology. Both are prone to degradation, which may be caused either by the degradation of the filter coating due to local deposition or to structural changes, or by the degradation of the silicon detector by solar radiative and energetic particle fluxes. In this study, we provide a theoretical analysis of the filter degradation that is caused by structural changes such as pinholes; contamination-induced degradation will not be considered. We then propose a new instrumental concept, which is expected to overcome, at least partially, these problems. We show how most of the solar UV spectrum can be reconstructed from the measurement of only five spectral bands. This instrumental concept outperforms present spectrometers in terms of degradation. This new concept in addition overcomes the need for silicon-based detectors, which are replaced by wide band gap material detectors. Front filters, which can contribute to in-flight degradation, therefore are not required, except for the extreme-UV (EUV) range. With a small weight and a low telemetry, this concept may also have applications in solar physics, in astrophysics and in planetology.

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Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors

Cited by 46 publications

References 23 publications

UV/VUV photodetectors using group III‐nitride semiconductors

UV/VUV photodetectors using group III‐nitride semiconductors

Probing exciton-phonon interaction in AlN epilayers by photoluminescence

New observation strategies for the solar UV spectral irradiance

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