Hybrid active pixel sensors and SOI inspired option

Amati, Matteo; Barański, Maciej; Bulgheroni, A.; Caccia, M.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kucewicz, W.; Kucharski, K.; Kuta, S.; Machowski, W.; Marczewski, J.; Niemiec, H.; Sapor, M.; Tomaszewski, D.

doi:10.1016/s0168-9002(03)01804-7

Cited by 18 publications

(5 citation statements)

References 5 publications

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“…More details on this interesting new technology has been reported at this conference and can be found in [60]. (left) Cross section through a monolithic CMOS on SOI pixel detector using high resistivity silicon bulk insolated from the low resistivity CMOS layer with connecting vias in between [61,59], (right) cross section through a structure using amorphous silicon on top of standard CMOS VLSI electronics [62,63].…”

Section: Cmos Technology With Charge Collection In Epi-layermentioning

confidence: 99%

Pixel detectors for tracking and their spin-off in imaging applications

Wermes

2005

Nuclear Instruments and Methods in Physics Research Section A:

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To detect tracks of charged particles close to the interaction point in high energy physics experiments of the next generation colliders, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the present state of the art in detector technology. Three of the LHC detectors as well as the BTeV detector at the Tevatron will use vertex detectors based on this technology. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as the very harsh radiation environment at the LHC for its full life time and without severe compromises in performance. From these developments a number of different applications have spun off, most notably for biomedical imaging. Beyond hybrid pixels, a number of trends and possibilities with yet improved performance in some aspects have appeared and presently developed to greater maturity. Among them are monolithic or semi-monolithic pixel detectors which do not require complicated hybridization but come as single sensor/IC entities. The present state in hybrid pixel detector development for the LHC experiments as well as for some imaging applications is reviewed and new trends towards monolithic or semi-monolithic pixel devices are summarized.

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Section: Cmos Technology With Charge Collection In Epi-layermentioning

confidence: 99%

Pixel detectors for tracking and their spin-off in imaging applications

Wermes

2005

Nuclear Instruments and Methods in Physics Research Section A:

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“…Despite using CMOS technology the potential of full CMOS circuitry in the active area is not available (only nMOS) because of the n-well/p-epi collecting diode which does not permit other n-wells. [15], [47], (B) CROSS SECTION THROUGH A STRUCTURE USING AMORPHOUS SILICON ON TOP OF STANDARD CMOS VLSI ELECTRONICS [48], [49].…”

Section: Monolithic and Semi-monolithic Pixel Detectorsmentioning

confidence: 99%

“…Fig. 12(A) CROSS SECTION THROUGH A MONOLITHIC CMOS ON SOI PIXEL DETECTOR USING HIGH RESISTIVITY SILICON BULK INSOLATED FROM THE LOW RESISTIVITY CMOS LAYER WITH CONNECTING VIAS IN BETWEEN[15],[47], (B) CROSS SECTION THROUGH A STRUCTURE USING AMORPHOUS SILICON ON TOP OF STANDARD CMOS VLSI ELECTRONICS[48],[49].…”

mentioning

confidence: 99%

Trends in pixel detectors: tracking and imaging

Wermes¹

2004

IEEE Trans. Nucl. Sci.

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For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking detectors and also imaging devices in radiography, autoradiography, protein crystallography and in X-ray astronomy. A number of trends and possibilities for future applications in these fields with improved performance, less material, high read-out speed, large radiation tolerance, and potential off-the-shelf availability have appeared and are momentarily matured. Among them are monolithic or semi-monolithic approaches which do not require complicated hybridization but come as single sensor/IC entities. Most of these are presently still in the development phase waiting to be used as detectors in experiments. The present state in pixel detector development including hybrid and (semi-)monolithic pixel techniques and their suitability for particle detection and for imaging, is reviewed.

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“…Monolithic Active Pixel based on SOI technology has been proposed as an ultimate monolithic sensor approach for tracking detectors due to the fact that the sensor and front-end readout electronics with different requirements on silicon parameters can be integrated into a single chip [1]. Such a technology offers fabrication of devices with a large number of readout channels with fine segmentation at a small cost.…”

Section: Introductionmentioning

confidence: 99%

A Monolithic Active Pixel Sensor for ionizing radiation using a 180nm HV-SOI process

Hemperek

Kishishita

Krüger

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tAn improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

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Hybrid active pixel sensors and SOI inspired option

Cited by 18 publications

References 5 publications

Pixel detectors for tracking and their spin-off in imaging applications

Pixel detectors for tracking and their spin-off in imaging applications

Trends in pixel detectors: tracking and imaging

A Monolithic Active Pixel Sensor for ionizing radiation using a 180nm HV-SOI process

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