Hybrid 2D/3D MoS2/GaN heterostructures for dual functional photoresponse

Abstract

Recently, mixed-dimensional p-n heterojunctions have shown desirable optoelectronic functionalities. However, relatively little is known about the influence of interfacial traps on electron transport under external bias. Here, we explore the prominent dual optoelectronic characteristics of n-MoS2/p-GaN heterostructures, including photodetection and persistent photocurrent (PPC). The photoresponsivity was found to achieve as high as ∼105 A W−1 for 532 nm laser illumination under reverse bias. Additionally, the device exhibits the long-lasting PPC with a decay time constant (460 s) under forward bias. The results indicate that the hybrid heterojunctions not only function as high performance photodetectors under reverse bias but also have potential to use the unique property of PPC for other optoelectronic applications under forward bias alternatively.

Influence of MoS2‐Silicon Interface States on Spectral Photoresponse Characteristics

“…It is important that both p‐type and n‐type TMDCs layers exit, which is a fundamental criterion for semiconductor physics for developing p‐n junction devices. The p‐type and n‐type TMDCs were also integrated with other bulk semiconductors, such as silicon (Si), gallium nitride (GaN) to develop efficient VdW heterojunction devices . Ultra‐fast charge transfer occurs at the interface of atomic layers, which bring new possibilities of device application by combining TMDCs layer with Si and other conventional semiconductors…”

Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors

“…Among the varieties of the TMDC family, molybdenum disulfide (MoS 2 ) is a representative of TMDC material with easy preparation via CVD and/or exfoliation, high electron mobility (>100 cm 2 /Vs), and an abundant form of MoS 2 as natural minerals [ 7 , 8 ]. Until now, enormous research activities, involving basic transport mechanisms, circuit level demonstration for flat panel displays and FinFETs, new concepts of devices, and gas sensors, have been extensively performed [ 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ]. In particular, among the numerous research fields of MoS 2 thin film transistors (TFTs), applications for photodetectors and display backplane transistors have been regarded as important and promising topics for the future technology with its novel electrical/optical properties [ 18 , 19 , 20 ].…”

Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process

“…MoS 2 optoelectronic performance from a homojunction formed by chemical doping [ 30 ] and MoS 2 phototransistors with high carrier mobility were studied also in wavelength ranges from ultraviolet to infrared [ 31 ]. Moreover, photodiodes using MoS 2 and other conventional semiconductor materials such as p-type silicon and GaN have been studied for years [ 32 , 33 , 34 ]. The samples in most of these research were used exfoliated flakes by mechanical exfoliation, however, which the limited size of flakes means difficulty using them in practical applications.…”