HVPE growth of GaN in the semipolar direction on planar Si(210)

Бессолов, В. Н.; Konenkova, E. V.; Shcheglov, M. P.; Sharofidinov, Shukrillo Sh.; Кукушкин, С. А.; Осипов, А. В.; Николаев, В. И.

doi:10.1002/pssc.201200566

Cited by 7 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Limited by the expensive cost of homoepitaxial substrates, most GaN‐based devices are heteroepitaxially grown on foreign substrates, such as sapphire (Al 2 O 3 ), silicon (Si), silicon carbide (SiC), and gallium arsenide (GaAs). [ 9–11 ] However, heteroepitaxial growth of GaN crystal would generate internal stress during the growth process, which is bad for the manufacturing of high‐performance GaN‐based devices with reliability and long lifetime. What is more, with the increase of growth thickness, cracking problems may occur, which is helpless to the further growth of high‐quality, large‐sized GaN single crystal.…”

Section: Introductionmentioning

confidence: 99%

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

Zhang

et al. 2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

The lack of high-quality gallium nitride (GaN) wafers may be a non-negligible bottleneck restricting the development of GaN-based devices. Although various processing methods have been used to reduce dislocation density, there is still plenty of room for the reduction of stress in GaN crystal. Herein, laser decomposition is verified as an efficient technique to reduce the interfacial stress in GaN-sapphire and improve the lateral epitaxial growth quality of GaN crystal. The variation of the stress on surface and at a depth of 2 μm by controlling the incident pulse energy is systematically studied and the physical mechanism of laser decomposition process is discussed. As the incident energy increases, the stress is weakened within a certain range. Experimental evidences of the good growth quality are displayed by the investigation of high-resolution X-ray diffraction, electron backscattered diffraction, and photoluminescence. Furthermore, high-quality UV photodetectors based on the as-obtained GaN are fabricated successfully, which show a strong photocurrent response and excellent stability. This work may pave a way towards improving crystal growth and provides a new insight for tuning interface stress so as to develop desired devices.

show abstract

Section: Introductionmentioning

confidence: 99%