Humidity Effect on Resistive Switching Characteristics of the CH₃NH₃PbI₃ Memristor

Abstract

Organic–inorganic hybrid halide perovskites (OIHPs) with inherent mixed ionic–electronic conduction ability have been proposed as promising candidates for memristors with unique optoelectronic characteristics. Despite the great achievements toward understanding the working mechanism and exploring their functionality as water-sensitive materials, the humidity effect on the resistive switching (RS) characteristics still remains to be studied. This study investigates the humidity effect on the RS characteristics of Au/CH3NH3PbI3/FTO memristor. The memristor works well at moderate relative humidity (RH, <75%) and degrades rapidly at higher RH of 90%. An obvious decrease in low resistance states on increasing the RH level is observed, which could be attributed to water-induced reduction of the iodide migration barrier. Raman and X-ray diffraction analyses indicate that the migration barrier reduction possibly originated from the weakening of the Pb–I bond caused by the intercalation of water molecules into the crystal lattice. The humidity-sensitive RS characteristics of the memristor could extend the scope of OIHP application for sensing and security applications and also prompt researchers to pay attention to the humidity effect on memristor devices with OIHPs.

Multiple Switching Modes of NiOx Memristors for Memory-Driven Multifunctional Device Applications

“…Note that the in the TMOs play an important role in the resistive switching behavior and mimicking synapse operation. − Migration of has been proposed to play an important role in the bipolar resistive switching behaviors because can directly determine the local conductivity in many memristive systems. However, the distribution is nonuniform at the oxide/electrode interface and resistive switching can be somewhat triggered by the reaction of water (H 2 O) molecules to on the surface and below the surface. − From the XPS analysis, two different hydroxides (532.1–533.5 eV), species for interacting H 2 O molecules (533.5 eV), , and surface species physisorbed (532.7 eV) on NiO x can be clearly distinguished . However, the O IV peak (532.4 eV, pink) is only observed for case (i).…”

Memristors with Biomaterials for Biorealistic Neuromorphic Applications

“…Recent research has also explored the use of light and humidity to control or affect the memristive behavior of the device, which expands the application scope of memristors to integrated sensing, memory, and computing functions. [ 37–42 ]…”

“…behavior of the device, which expands the application scope of memristors to integrated sensing, memory, and computing functions. [37][38][39][40][41][42] To date, a variety of materials including transition metal oxides, organics, biomaterials, chalcogenides, carbon-based materials, polymers, etc. have been explored as building blocks for memristor devices.…”

Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N-Containing Heteroaromatic Semiconductors

“…A variety of organic materials including polymers, ,, small molecules, − and organic–inorganic hybrid compounds − have been used as electroactive elements in ReRAM devices. Especially, the resistances of some metal/organic/metal structured memory devices can be effectively adjustable through molecular engineering, leading to multilevel data storage. ,,− However, the probable instability of organic active compounds under high voltages often causes device degradation and/or failure during long-term operation. , Another challenge faced by organic-based ReRAM is the non-ideal resistive switching because of the inferior intrinsic conductivity of organic molecules .…”