2017
DOI: 10.1016/j.vacuum.2017.08.048
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HPPMS deposition from composite targets: Effect of two orders of magnitude target power density changes on the composition of sputtered Cr-Al-C thin films

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Cited by 21 publications
(26 citation statements)
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“…The unknown peak at 26° in the Cr 2 AlC bulk target is absent in the coatings’ patterns obtained after annealing. The presence of chromium carbide in XRD results indicates that the coatings’ composition somewhat differs from the target, resulting from preferred aluminum resputtering during the deposition process [ 34 ]. Moreover, the Cr-Al-C phase diagram confirms the coexistence of intermediate phases (AlC 2 , Cr 7 C 3 , Cr 3 C 2 ) with Cr 2 AlC MAX phase if the stoichiometric ratio of Cr/Al/C deviates from 2:1:1 [ 20 , 42 ].…”
Section: Resultsmentioning
confidence: 99%
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“…The unknown peak at 26° in the Cr 2 AlC bulk target is absent in the coatings’ patterns obtained after annealing. The presence of chromium carbide in XRD results indicates that the coatings’ composition somewhat differs from the target, resulting from preferred aluminum resputtering during the deposition process [ 34 ]. Moreover, the Cr-Al-C phase diagram confirms the coexistence of intermediate phases (AlC 2 , Cr 7 C 3 , Cr 3 C 2 ) with Cr 2 AlC MAX phase if the stoichiometric ratio of Cr/Al/C deviates from 2:1:1 [ 20 , 42 ].…”
Section: Resultsmentioning
confidence: 99%
“…This ratio increases with the increase in average power in HiPIMS. The observed Cr/Al ratio in the annealed specimen is slightly higher than that of as-deposited coatings in each case, indicating that the deposited Cr and Al are depleted owing to high ionization in HiPIMS or preferred aluminum resputtering during the deposition process [ 34 ]. Moreover, Al loss is more significant in the annealed coating, which indicates that the Al is diffused out from the coating surface during the ex situ annealing because the 650 °C annealing temperature nearly equals the melting point of Al or vaporized into the furnace environment during the high vacuum annealing process.…”
Section: Resultsmentioning
confidence: 99%
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“…The evaporation of A-elements is a general phenomenon in MAX-phase growth and even more pronounced for elements with higher vapor pressures (e.g., Al and In). 65 This implies that growth of Ti3SiC2 from a compound source is restricted to a certain temperature range to avoid Si evaporation and the on-set for growth of phases with a lower Si content such as Ti4SiC3 and Ti7Si2C5 with 12.5 at% and 14.3 at% Si, respectively.…”
Section: Sputtering Power [W]mentioning
confidence: 99%
“…Likewise, the employment of multi-elemental powder metallurgical composite targets is of great interest from an industrial application point of view due to the enhanced stability and repeatability [11] of non-reactive sputtering compared to reactive sputtering processes. However, it has been shown that the chemical composition of thin films deposited from multi-element targets deviates from the target composition, especially in targets with significant mass differences between their constituents, such as TiB [12][13][14], TiW [15][16][17][18][19][20][21][22], WB [23], SiC [24], MoSi [25,26], VC [27], NbC [28], Cr-Al-C [29,30], Ti 2 AlC [31], Ti 3 SiC 2 [32,33], and CuZnSnSe [34]. The difference in the chemical film composition was attributed to several mechanisms: (i) the mass and size differences of the target constituents and the respectively associated different angular and energy distribution functions (EDF) of the sputtered species [12,25,26,29,35]; (ii) their mean free paths, as well as the energy transfer in collisions with the sputtering gas during transport [12,13,15,21,29,35]; and (iii) different sticking coefficients and re-sputtering of the film constituents by backscattered Ar [15][16][17][18]…”
Section: Introductionmentioning
confidence: 99%