HPHT synthesis of large single crystal diamond doped with high nitrogen concentration

Zhang, Yafei; Chuan-Yi, Zang; Ma, Hongan; Liang, Zhongzhu; Zhou, Lin; Li, Shangsheng; Jia, Xiaopeng

doi:10.1016/j.diamond.2007.12.018

Cited by 63 publications

(45 citation statements)

References 11 publications

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“…[29] This process has since been improved using different presses and the addition of catalysts in order to decrease the reaction conditions to approximately 5 GPa and 1 200 8C. [30] Diamond has traditionally been considered the best option for superhard industrial requirements and the current production of synthetic diamond is estimated to be 110 tons annually (500 million carats). Its mechanical robustness and general chemical inertness make it widely applicable.…”

Section: Conventional Superhard Materialsmentioning

confidence: 99%

Advancements in the Search for Superhard Ultra‐Incompressible Metal Borides

Levine

Tolbert

Kaner

2009

Adv Funct Materials

333

232

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Dense transition metal borides have recently been identified as superhard materials that offer the possibility of ambient pressure synthesis compared to the conventional high pressure, high temperature approach. This feature article begins with a discussion of the relevant physical properties for this class of compounds, followed by a summary of the synthesis and properties of several transition metal borides. A strong emphasis is placed on correlating mechanical properties with electronic and atomic structure of these materials in an effort to better predict new superhard compounds. It concludes with a perspective of future research directions, highlighting some recent results and presenting several new ideas that remain to be tested.

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Section: Conventional Superhard Materialsmentioning

confidence: 99%

Advancements in the Search for Superhard Ultra‐Incompressible Metal Borides

Levine

Tolbert

Kaner

2009

Adv Funct Materials

333

232

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“…As is known diamond crystals grown from the conventional transition metal catalysts typically contain 200-300 ppm of nitrogen, if no measures to suppress nitrogen incorporation are taken. This concentration can be increased to about 1000 ppm and higher if nitrogen containing compounds, such as CaCN 2 , Fe 3 N, NaN 3 , etc., are added to the growth system [37,38]. On the other hand, there is a growing body of evidence that diamonds synthesized using different mostly non-metallic catalysts may contain as high as 1000 ppm of nitrogen even if no nitrogen-containing species were deliberately added to the crystallization system [39,40].…”

Section: Spectroscopic Study Of Diamond Grown From the Cu-c Systemmentioning

confidence: 98%

HPHT growth and characterization of diamond from a copper-carbon system

Kupriyanov

Khokhryakov

Borzdov

et al. 2016

Diamond and Related Materials

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“…These factors limit the promising application and the precise measurement of infrared absorption spectra (FTIR). Recently, we further reported the HPHT synthesis of large single crystal diamond with high N c around 1520 ppm by TGM [9]. However, the effects of additive NaN 3 on the crystal growth behavior and N c in synthetic diamond have not been investigated.…”

Section: Introductionmentioning

confidence: 96%

Effects of additive NaN3 on the HPHT synthesis of large single crystal diamond grown by TGM

Guo-Feng

Jia

et al. 2010

Sci. China Phys. Mech. Astron.

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In this paper, large single crystal diamond with perfect shape and high nitrogen concentration approximately 1671-1742 ppm was successfully synthesized by temperature gradient method (TGM) under high pressure and high temperature (HPHT). The HPHT synthesis conditions were about 5.5 GPa and 1500-1550 K. Sodium azide (NaN 3 ) with different amount was added as the source of nitrogen into the synthesis system of high pure graphite and kovar alloy. The effects of additive NaN 3 on crystal growth habit were investigated in detail. The crystal morphology, nitrogen concentration and existing form in synthetic diamond were characterized by means of scanning electron microscope (SEM) and infrared (IR) absorption spectra, respectively. The results show that with an increase of the content of NaN 3 added in the synthesis system, the region of synthesis temperature for high-quality diamond becomes narrow, and crystal growth rate is restricted, whereas the nitrogen concentration in synthetic diamond increases. Nitrogen exists in diamond mainly in dispersed form (C-centers) and partially aggregated form (A-centers). The defects occur more frequently on crystal surface when excessive NaN 3 is added in the synthesis system. HPHT, high nitrogen concentration, TGM, large single crystal diamond

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HPHT synthesis of large single crystal diamond doped with high nitrogen concentration

Cited by 63 publications

References 11 publications

Advancements in the Search for Superhard Ultra‐Incompressible Metal Borides

Advancements in the Search for Superhard Ultra‐Incompressible Metal Borides

HPHT growth and characterization of diamond from a copper-carbon system

Effects of additive NaN3 on the HPHT synthesis of large single crystal diamond grown by TGM

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