How the vibrational frequency varies with temperature

Kolesov, B. A.

doi:10.1002/jrs.5009

Cited by 29 publications

(29 citation statements)

References 41 publications

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“…As shown in figure 2(b), line positions versus temperature for ND-N, ND-Ge and ND-Si are very close, and decreases as the temperature increases corresponding to the standard thermal behavior of phonon mode. This variation is in accordance with several results reported in the literature [47][48][49][50][51].…”

Section: First-order Raman Line Of Diamondssupporting

confidence: 93%

Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)

Zaghrioui

Агафонов

Davydov

2020

Mater. Res. Express

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Raman scattering and photoluminescence measurements have been carried out on nano-diamonds containing Nitrogen-vacancy (NV − ), Silicon-Vacancy (SiV − ) and Germanium-vacancy (GeV − ) synthesized by high pressure and high temperature method. Optical zero-phonon-line transition of these negatively charged centres were measured from room temperature up to 600°C under air. The results show that all nano-diamonds are stable at this temperature range and spectra are reproducible for heating and cooling cycles. Thermal behaviors of linewidth and zero phonon line, for SiV − and GeV − centres, are well described by the second-order electron-phonon interactions involving twophonon and elastic processes.

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Section: First-order Raman Line Of Diamondssupporting

confidence: 93%

Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)

Zaghrioui

Агафонов

Davydov

2020

Mater. Res. Express

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“…It can be seen that the spectral positions of the Raman line are very close for these two diamonds, and that they follow the same temperature dependence. The model description of the Raman line shift with temperature, being still a matter of research [24,25], lies beyond the scope of the present work and is not addressed here. The Lorentzian line width of the diamonds with and without nitrogen is different, but the difference is temperature independent.…”

Section: Resultsmentioning

confidence: 99%

Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Surovtsev

Kupriyanov

2017

Crystals

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Abstract:The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed.

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“…In addition, α a and α c are the linear coefficients of thermal expansion corresponding to the a and c axes with α a = 11.0 × 10 −6 K −1 and α c = 4.1 × 10 −6 K −1 , [11] and there reported the similar trend in thermal expansion behavior for delafossite compound. [31] The third term Δω 2 (T) and the linewidth-dependent temperature can be written as [11,38]…”

Section: Resultsmentioning

confidence: 99%

Raman scattering measurements of phonon anharmonicity in the delafossite CuGa_1‐xCr_xO₂ (0 ≤ x ≤ 1) films

Han

Liu

et al. 2020

J Raman Spectroscopy

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Raman spectra of the delafossite CuGa 1-x Cr x O 2 (0 ≤ x ≤ 1) solid solution films have been measured in the temperature range from 80 to 823 K. Raman phonon modes are observed at 224 (A g ), 328 (A 2u ), 396 (E g ), and 757 (A 1g ) cm −1 for the CuGaO 2 film, and phonon modes of the CuCrO 2 film are around 211 (A g ), 324 (A 2u ), 458 (E g ), and 712 (A 1g ) cm −1 , respectively. The A 1g phonon mode has a distinct redshift with increasing Cr composition, which indicates that the interatomic potential becomes weaker between Cu and O atoms. Except Raman modes at the Brillouin zone center, the additional phonon modes in the spectral range of 500−670 cm −1 were observed due to Raman selection rules being relaxed by the crystal defects. With increasing temperature, the A 1g phonon mode undergoes a larger phonon softening but a smaller line broadening relative to that of the E g phonon mode, which indicated the anisotropic behavior for the delafossite CuGa 1-x Cr x O 2 films. The nonlinear temperature dependence of the phonon frequency and linewidth is an indication of nonharmonic lattice dynamics. The Raman shift and the linewidth of the E g and A 1g optical modes as a function of temperature were studied as an experimental evidence of the combined effect of lattice expansion and anharmonic phonon-phonon interaction. And the three-phonon anharmonic coupling plays the dominant role in the anharmonicity behavior. The phonon anharmonicity behavior of the CuGaO 2 and CuCrO 2 films is slightly different. The larger Γ 0 is intrinsic for the A 1g mode of the CuGa 0.8 Cr 0.2 O 2 film due to the broadening by the crystalline defects, which perturb the translation symmetry of the harmonic crystal, making the momentum conservation rule for phonon scattering partially relaxed. K E Y W O R D Sdelafossite, phonon mode, Raman spectra, temperature, vibrational anharmonicity

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How the vibrational frequency varies with temperature

Cited by 29 publications

References 41 publications

Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)

Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)

Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Raman scattering measurements of phonon anharmonicity in the delafossite CuGa_1‐xCr_xO₂ (0 ≤ x ≤ 1) films

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How the vibrational frequency varies with temperature

Cited by 29 publications

References 41 publications

Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)

Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)

Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Raman scattering measurements of phonon anharmonicity in the delafossite CuGa1‐xCrxO2 (0 ≤ x ≤ 1) films

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Raman scattering measurements of phonon anharmonicity in the delafossite CuGa_1‐xCr_xO₂ (0 ≤ x ≤ 1) films